Dataset supporting the paper "High sodium-ion battery capacity in sulfur-deficient tin(II) sulfide thin films with a microrod morphology"
Link for dataset: https://doi.org/10.5258/SOTON/D2541

Zening Zhu, Geoffrey Hyett, Gillian Reid, Fred Robinson, and Andrew L. Hector
School of Chemistry, University of Southampton, Southampton SO17 1BJ, UK

Giannantonio Cibin
Diamond Light Source, Harwell Science and Innovation Campus, Fermi Ave, Didcot OX11 0DE

Paper published in Small Structures, https://doi.org/10.1002/sstr.202200396
All numerical data for figures are supplied in text format, organised in columns with header labels:

Fig. 3a) Powder XRD patterns for a powder produced by scraping off and grinding the AACVD sulfur-deficient SnS thin film.
Fig. 3b) Grazing incidence XRD pattern for the AACVD stoichiometric SnS thin film.
Fig. 5a) Potential-capacity plot during galvanostatic cycling of sulfur-deficient SnS in Na half-cells at 150 mA g−1.
Fig. 5b) Plot of specific capacity and efficiency vs. cycle number of sulfur-deficient SnS in Na half-cells at 150 mA g−1.
Fig. 5c) Potential-capacity plot during galvanostatic cycling of sulfur-deficient SnS in Na half-cells at 300 mA g−1.
Fig. 5d) Plot of specific capacity and efficiency vs. cycle number of sulfur-deficient SnS in Na half-cells at 300 mA g−1.
Fig. 6a) Plot of 100 cycle cell specific capacity and efficiency vs. cycle number of sulfur-deficient SnS in Na half-cells at 600 mA g−1.
Fig. 6b) Rate capabilities of sulfur-deficient SnS in Na half-cells at 100, 300, 450, 600, then returning to 100 mA g−1.
Fig. 7b) dQ/dE vs potential curves obtained from sulfur-deficient SnS at the 1st, 10th, 20th and 30th dQ/dE vs potential curves obtained from sulfur-deficient SnS at the 1st, 10th, 20th and 30th cycle.
Fig. 8b) EDX spectrum obtained for a sulfur-deficient SnS electrode after the first cycle at a specific current of 150 mA g-1.
Fig. 9) Ex situ XRD patterns of sulfur-deficient SnS during the first sodiation and desodiation process, with samples produced at the potentials shown and as described in Fig. 7.
Fig. 10a) Sn K-edge X-ray absorption near edge structure (XANES) spectra during first sodiation/desodiation.

Fig. S1a) Galvanostatic cycling of SnS in Na half-cell (Al current collector) at 150 mA g−1.
Fig. S1b) Plot of specific capacity and Coulombic efficiency vs. cycle number of SnSe in Na half-cell (Al current collector) at 150 mA g−1.
Fig. S2) EDX spectrum obtained for a sulfur-deficient (a) and stoichiometric (b) SnS film produced using AACVD.
Fig. S3) Grazing incidence XRD patterns for the AACVD sulfur-deficient SnS thin film.
Fig. S5a) Galvanostatic cycling of stoichiometric SnS in Na half-cell at 150 mA g−1.
Fig. S5b) Plot of specific capacity and efficiency vs. cycle number of stoichiometric SnS in Na half-cell at 150 mA g−1.
Fig. S6) Plots of capacity vs. cycle number of different mass-loading sulfur-deficient SnS in Na half-cells at 150 mA g−1