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Electrode engineering in memristors development for non-/erasable storage, random number generator, and synaptic applications

Electrode engineering in memristors development for non-/erasable storage, random number generator, and synaptic applications
Electrode engineering in memristors development for non-/erasable storage, random number generator, and synaptic applications
We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.
171-175
IEEE
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Talbi, Fayzah
9f4ee979-ca6a-4497-b62a-5aae661e167c
Kerrigan, Adam
7bd6c6e0-d8ef-4f84-bc74-1bedab13330e
Lazarov, Vlado K.
83021bf7-42df-43bd-8db2-da4080e7f342
Prodromakis, Themistoklis
7af7ccd9-1fb5-4da5-9f0b-165ae6c8fbe0
Yunanto, Andhik Ampuh
Prayogi, Yanuar Risah
Putra, Putu Agus Mahadi
Hermawan, Hendhi
Nailussa'ada,
Ruswiansari, Maretha
Ridwan, Mohamad
Gamar, Farida
Ramadhani, Afifah Dwi
Rahmawati, Weny Mistarika
Rusli, Muhammad Rizani
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Talbi, Fayzah
9f4ee979-ca6a-4497-b62a-5aae661e167c
Kerrigan, Adam
7bd6c6e0-d8ef-4f84-bc74-1bedab13330e
Lazarov, Vlado K.
83021bf7-42df-43bd-8db2-da4080e7f342
Prodromakis, Themistoklis
7af7ccd9-1fb5-4da5-9f0b-165ae6c8fbe0
Yunanto, Andhik Ampuh
Prayogi, Yanuar Risah
Putra, Putu Agus Mahadi
Hermawan, Hendhi
Nailussa'ada,
Ruswiansari, Maretha
Ridwan, Mohamad
Gamar, Farida
Ramadhani, Afifah Dwi
Rahmawati, Weny Mistarika
Rusli, Muhammad Rizani

Simanjuntak, Firman Mangasa, Talbi, Fayzah, Kerrigan, Adam, Lazarov, Vlado K. and Prodromakis, Themistoklis (2022) Electrode engineering in memristors development for non-/erasable storage, random number generator, and synaptic applications. Yunanto, Andhik Ampuh, Prayogi, Yanuar Risah, Putra, Putu Agus Mahadi, Hermawan, Hendhi, Nailussa'ada, , Ruswiansari, Maretha, Ridwan, Mohamad, Gamar, Farida, Ramadhani, Afifah Dwi, Rahmawati, Weny Mistarika and Rusli, Muhammad Rizani (eds.) In 2022 International Electronics Symposium (IES). IEEE. pp. 171-175 . (doi:10.1109/IES55876.2022.9888713).

Record type: Conference or Workshop Item (Paper)

Abstract

We report the process development of ZnO-based memristors and observe various switching phenomena by means of electrode engineering, such as digital-to-analogue transformation, irregular and uniform endurance, and non-erasable switching; we also discuss the potential applications for each of these switching phenomena. The use of inert electrodes induces a high injection of electrons into the switching layer triggering abrupt current changes and, in some cases, resulting in a device breakdown. Meanwhile, a low work function and oxidizable electrode encourage Ohmic contact at the oxide/electrode junction and exhibit gradual switching characteristics. This work addresses the importance of electrode configuration to achieve the desired switching behaviour for specific low-powered electronic applications.

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(Accepted version) 2022-Electrode Engineering in Memristors Development_20220723 - Accepted Manuscript
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e-pub ahead of print date: 19 September 2022
Venue - Dates: International Electronics Symposium 2022: Energy Development for Climate Change Solution and Clean Energy Transition, Politeknik Elektronika Negeri Surabaya, Surabaya, Indonesia, 2022-08-09 - 2022-08-11
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Identifiers

Local EPrints ID: 475252
URI: http://eprints.soton.ac.uk/id/eprint/475252
DOI: doi:10.1109/IES55876.2022.9888713
PURE UUID: dbeca82e-64a2-45df-9cd4-ccb1df7eda56
ORCID for Firman Mangasa Simanjuntak: ORCID iD orcid.org/0000-0002-9508-5849

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Date deposited: 14 Mar 2023 17:50
Last modified: 18 Mar 2024 03:54

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Contributors

Author: Firman Mangasa Simanjuntak ORCID iD
Author: Fayzah Talbi
Author: Adam Kerrigan
Author: Vlado K. Lazarov
Author: Themistoklis Prodromakis
Editor: Andhik Ampuh Yunanto
Editor: Yanuar Risah Prayogi
Editor: Putu Agus Mahadi Putra
Editor: Hendhi Hermawan
Editor: Nailussa'ada
Editor: Maretha Ruswiansari
Editor: Mohamad Ridwan
Editor: Farida Gamar
Editor: Afifah Dwi Ramadhani
Editor: Weny Mistarika Rahmawati
Editor: Muhammad Rizani Rusli

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