Towards solution-processed RF rectennas: experimental characterization and non-linear modelling based on ZnO nanogap diodes
Towards solution-processed RF rectennas: experimental characterization and non-linear modelling based on ZnO nanogap diodes
The growing demands of the IoT market call for novel ultra-low-cost RF semiconductor devices. Using GHz-frequency Schottky diodes fabricated on a wafer-scale, low-cost natively flexible rectennas and RF energy harvesters can be realized. This paper will present, for the first time, the non-linear model followed by antenna-circuit co-design for solution-processed Zinc-Oxide (ZnO) Schottky diodes. The diode's equiv-alent circuit model is extracted and compared to experimental on-wafer characterization showing very good agreement up to 40 GHz. Using a complex-impedance source emulating a printable rectenna, the designed voltage doubler rectifier shows a power conversion efficiency up to 70% in the UHF RFID band (0.915 GHz). The optimum source and load impedance parameters for a single-series and voltage-doubler rectifier are finally presented, showing that ZnO nano-gap diodes can be adopted in future rectenna designs.
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Wagih, M.
7e7b16ba-0c64-4f95-bd3c-99064055f693
Georgiadou, D.G.
84977176-3678-4fb3-a3dd-2044a49c853b
12 December 2022
Wagih, M.
7e7b16ba-0c64-4f95-bd3c-99064055f693
Georgiadou, D.G.
84977176-3678-4fb3-a3dd-2044a49c853b
Wagih, M. and Georgiadou, D.G.
(2022)
Towards solution-processed RF rectennas: experimental characterization and non-linear modelling based on ZnO nanogap diodes.
In ICECS 2022 - 29th IEEE International Conference on Electronics, Circuits and Systems, Proceedings.
IEEE.
.
(doi:10.1109/ICECS202256217.2022.9971051).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The growing demands of the IoT market call for novel ultra-low-cost RF semiconductor devices. Using GHz-frequency Schottky diodes fabricated on a wafer-scale, low-cost natively flexible rectennas and RF energy harvesters can be realized. This paper will present, for the first time, the non-linear model followed by antenna-circuit co-design for solution-processed Zinc-Oxide (ZnO) Schottky diodes. The diode's equiv-alent circuit model is extracted and compared to experimental on-wafer characterization showing very good agreement up to 40 GHz. Using a complex-impedance source emulating a printable rectenna, the designed voltage doubler rectifier shows a power conversion efficiency up to 70% in the UHF RFID band (0.915 GHz). The optimum source and load impedance parameters for a single-series and voltage-doubler rectifier are finally presented, showing that ZnO nano-gap diodes can be adopted in future rectenna designs.
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Published date: 12 December 2022
Venue - Dates:
IEEE International Conference on Electronics, Circuits and Systems (ICECS), , Glasgow, United Kingdom, 2022-10-24 - 2022-10-26
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Local EPrints ID: 476180
URI: http://eprints.soton.ac.uk/id/eprint/476180
PURE UUID: f85b0904-231a-4dc4-bf6a-8e4e2c16c724
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Date deposited: 13 Apr 2023 16:43
Last modified: 23 Nov 2024 03:02
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Author:
M. Wagih
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