Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process
Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 107. In addition, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at ±5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.
Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
März, Benjamin
3db56567-9950-4328-8bd7-81b091e9ff62
Müller-Caspary, Knut
5e862f46-cbeb-448c-a87a-9e8804edd4c4
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Weatherby, Edwin
90e34e23-3a6e-432f-8003-6510efbe1d02
Light, Mark
cf57314e-6856-491b-a8d2-2dffc452e161
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Majumdar, Sayani
7a50c015-9753-49ea-a554-857d92340189
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
27 March 2023
Aspiotis, Nikolaos
b32d40f9-0496-464e-bfcc-217f57ca9dc3
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
März, Benjamin
3db56567-9950-4328-8bd7-81b091e9ff62
Müller-Caspary, Knut
5e862f46-cbeb-448c-a87a-9e8804edd4c4
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Weatherby, Edwin
90e34e23-3a6e-432f-8003-6510efbe1d02
Light, Mark
cf57314e-6856-491b-a8d2-2dffc452e161
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Majumdar, Sayani
7a50c015-9753-49ea-a554-857d92340189
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Aspiotis, Nikolaos, Morgan, Katrina, März, Benjamin, Müller-Caspary, Knut, Ebert, Martin, Weatherby, Edwin, Light, Mark, Huang, Kevin Chung-Che, Hewak, Daniel W., Majumdar, Sayani and Zeimpekis, Ioannis
(2023)
Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process.
npj 2D Mater Appl, 7, [18].
(doi:10.1038/s41699-023-00379-z).
Abstract
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 107. In addition, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at ±5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.
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Accepted/In Press date: 10 March 2023
Published date: 27 March 2023
Additional Information:
Funding Information:
The support of the UK’s Engineering and Physical Science Research Centre is gratefully acknowledged, through EP/N00762X/1 National Hub in High Value Photonic Manufacturing. The project made use of the Micronova Nanofabrication Centre. The ESTEEM3 project funded through grant agreement 823717 is acknowledged for supporting the preliminary top view STEM studies. B.M. and K.M.-C. acknowledge financial support from the Deutsche Forschungsgemeinschaft under grant number EXC 2089/1–390776260 (Germany ́s Excellence Strategy). The authors also acknowledge the use of facilities within the Loughborough Materials Characterisation Centre. The authors acknowledge the EPSRC for financial support of the Rigaku SmartLab via grants (EP/K009877/1), (EP/K00509X/1) and (EP/V035975/1). S.M. acknowledges financial support from the Academy of Finland (Grant no. 345068 and 350667) and European Union’s Horizon 2020 research and innovation programme under Grant Agreement 881603 (Graphene Flagship Core3).
Funding Information:
The support of the UK’s Engineering and Physical Science Research Centre is gratefully acknowledged, through EP/N00762X/1 National Hub in High Value Photonic Manufacturing. The project made use of the Micronova Nanofabrication Centre. The ESTEEM3 project funded through grant agreement 823717 is acknowledged for supporting the preliminary top view STEM studies. B.M. and K.M.-C. acknowledge financial support from the Deutsche Forschungsgemeinschaft under grant number EXC 2089/1–390776260 (Germany ́s Excellence Strategy). The authors also acknowledge the use of facilities within the Loughborough Materials Characterisation Centre. The authors acknowledge the EPSRC for financial support of the Rigaku SmartLab via grants (EP/K009877/1), (EP/K00509X/1) and (EP/V035975/1). S.M. acknowledges financial support from the Academy of Finland (Grant no. 345068 and 350667) and European Union’s Horizon 2020 research and innovation programme under Grant Agreement 881603 (Graphene Flagship Core3).
Publisher Copyright:
© 2023, The Author(s).
Identifiers
Local EPrints ID: 476308
URI: http://eprints.soton.ac.uk/id/eprint/476308
ISSN: 2397-7132
PURE UUID: 1b06439c-df8e-42f1-b6be-faeed813a262
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Date deposited: 19 Apr 2023 16:33
Last modified: 17 Mar 2024 03:24
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Contributors
Author:
Nikolaos Aspiotis
Author:
Katrina Morgan
Author:
Benjamin März
Author:
Knut Müller-Caspary
Author:
Edwin Weatherby
Author:
Sayani Majumdar
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