Process variation independent built-in current sensor for analogue built-in selftest
Process variation independent built-in current sensor for analogue built-in selftest
A new design of built-in current sensor for dynamic supply current testing of analogue integrated circuits is proposed. The sensor has been designed and realized with AMS 0.8 CYE CMOS technology. The sensor occupies 0.019mm2 silicon area, which is almost as big as a simple two-stage CMOS opamp. Unlike previously published sensors, this new built-in current sensor is process variation independent.
IV398-IV401
Kiliç, Y.
5170923b-5980-4070-af0f-43600d564d90
Zwoliński, M.
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
2001
Kiliç, Y.
5170923b-5980-4070-af0f-43600d564d90
Zwoliński, M.
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
Kiliç, Y. and Zwoliński, M.
(2001)
Process variation independent built-in current sensor for analogue built-in selftest.
In Materials Research Symposium.
vol. 626,
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
A new design of built-in current sensor for dynamic supply current testing of analogue integrated circuits is proposed. The sensor has been designed and realized with AMS 0.8 CYE CMOS technology. The sensor occupies 0.019mm2 silicon area, which is almost as big as a simple two-stage CMOS opamp. Unlike previously published sensors, this new built-in current sensor is process variation independent.
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Published date: 2001
Venue - Dates:
Thermoelectric Materials 2000-The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications, , San Francisco, CA, United States, 2000-04-24 - 2000-04-27
Identifiers
Local EPrints ID: 476376
URI: http://eprints.soton.ac.uk/id/eprint/476376
ISSN: 0272-9172
PURE UUID: 087943f1-1cde-4d28-84be-9364d69cde75
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Date deposited: 19 Apr 2023 16:47
Last modified: 20 Jan 2024 02:33
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Contributors
Author:
Y. Kiliç
Author:
M. Zwoliński
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