Tungsten dichalcogenide WS2xSe2-2x films via single source precursor low-pressure CVD and their (thermo-)electric properties
Tungsten dichalcogenide WS2xSe2-2x films via single source precursor low-pressure CVD and their (thermo-)electric properties
Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precursors, [WECl4(E′nBu2)] (E = S or Se; E′ = S or Se), via low-pressure chemical vapour deposition. Compositional and structural characterisations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterisation via Hall measurements reveals high electrical conductivities for those films. Such high conductivity is likely related to Se and S vacancies in the films and can be tuned through an annealing process. The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K.
9635 - 9645
Sethi, Vikesh
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Runacres, Danielle
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Greenacre, Victoria
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Shao, Li
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Hector, Andrew L.
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Levason, William
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De Groot, Kees
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Reid, Gillian
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Huang, Ruomeng
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2 May 2023
Sethi, Vikesh
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Runacres, Danielle
aae55f94-b99a-4e9f-9d1b-8bcd3f2a93b6
Greenacre, Victoria
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Shao, Li
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Hector, Andrew L.
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Levason, William
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De Groot, Kees
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Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sethi, Vikesh, Runacres, Danielle, Greenacre, Victoria, Shao, Li, Hector, Andrew L., Levason, William, De Groot, Kees, Reid, Gillian and Huang, Ruomeng
(2023)
Tungsten dichalcogenide WS2xSe2-2x films via single source precursor low-pressure CVD and their (thermo-)electric properties.
Journal of Materials Chemistry A, .
(doi:10.1039/D3TA00466J).
Abstract
Semiconducting transition metal dichalcogenides have gained increased interest as potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we present the deposition of stoichiometric WS2xSe2−2x (0 ≤ x ≤ 1) binary and ternary thin films using the single source precursors, [WECl4(E′nBu2)] (E = S or Se; E′ = S or Se), via low-pressure chemical vapour deposition. Compositional and structural characterisations of the deposits have been performed by grazing-incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, confirming the phase purity and stoichiometry. Electrical characterisation via Hall measurements reveals high electrical conductivities for those films. Such high conductivity is likely related to Se and S vacancies in the films and can be tuned through an annealing process. The thermoelectric capabilities of the WS2xSe2−2x have been characterised with the use of variable-temperature Seebeck measurements, showing a peak power factor of 6 μW m−1 K−2 for the as-deposited WS2 film at 553 K.
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d3ta00466j
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Accepted/In Press date: 3 April 2023
e-pub ahead of print date: 3 April 2023
Published date: 2 May 2023
Additional Information:
Funding Information:
This work is financially supported by EPSRC via EP/P025137/1 and EP/V062689/1. V. S. and D. R. also thank EPSRC for their PhD studentships (EP/R513325/1, EP/N50947/1). We also thank the EPSRC for equipment funding under EP/K00509X/1 and EP/K009877/1. All data supporting this study are openly available from the University of Southampton repository at https://doi.org/10.5258/SOTON/D2572 .
Funding Information:
This work is financially supported by EPSRC via EP/P025137/1 and EP/V062689/1. V. S. and D. R. also thank EPSRC for their PhD studentships (EP/R513325/1, EP/N50947/1). We also thank the EPSRC for equipment funding under EP/K00509X/1 and EP/K009877/1. All data supporting this study are openly available from the University of Southampton repository at https://doi.org/10.5258/SOTON/D2572.
Publisher Copyright:
© 2023 The Royal Society of Chemistry.
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Local EPrints ID: 476655
URI: http://eprints.soton.ac.uk/id/eprint/476655
ISSN: 2050-7488
PURE UUID: d3bd69f3-ee84-43b9-bc5c-c89f30ed311c
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Date deposited: 10 May 2023 17:10
Last modified: 17 Mar 2024 04:12
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Author:
Vikesh Sethi
Author:
Danielle Runacres
Author:
Victoria Greenacre
Author:
Li Shao
Author:
Ruomeng Huang
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