Random lasing behaviour in Al- doped ZnO nanorods

Azmi, Atiqah Nabieha, Wan Ahmad Kamil, Wan Maryam, Abu Hassan, Haslan, Wan Ismail, Wan Zakiah and Muskens, Otto (2023) Random lasing behaviour in Al- doped ZnO nanorods. IEEE Internet of Things Journal, 138, [113718]. (doi:10.1016/j.optmat.2023.113718).

Record type: Article

Abstract

A novel method of doping Aluminum (Al) into zinc oxide (ZnO) nanorods by a simple chemical dip process is evaluated in terms of its performance in random lasing. The ZnO nanorods were synthesized by the chemical bath deposition (CBD) method at a fixed temperature of 96 °C for 3 h. The ZnO nanorods were then dipped into a fixed doping solution concentration. The dip time was varied between 0 s and 80 s and a gradual increase of Al % from the nanorod array was observed with increasing dip time. Doping ZnO nanorods in aluminum nitrate nonahydrate solution for 40 s contributes to random lasing with the lowest threshold value of 12.48 mJ/cm2 and a spectral width of 2.12 nm.

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Randon Lasing Behaviour in A1-doped ZnO nanorods - Accepted Manuscript

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Accepted/In Press date: 21 March 2023

e-pub ahead of print date: 31 March 2023

Published date: April 2023

Additional Information: Funding Information: This work was supported by Kementerian Pendidikan Malaysia through Fundamental Research.Grant Scheme (FRGS) under account number: FRGS/1/2018/STG02/USM/02/6 . Publisher Copyright: © 2023 Elsevier B.V.

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