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Nano-scale sulphide phase change materials and applications

Nano-scale sulphide phase change materials and applications
Nano-scale sulphide phase change materials and applications
Sulphur-based phase change materials have been investigated for potential nano-scale electrical phase change memories. These materials are stable in both there crystalline and amorphous phases. Switching is achieved by either melting the material to form an amorphous area or heating above its crystallisation temperature. This can be achieved through Joule heating by application of an energy pulse in the form of an electrical current or laser heating. In this work the switching speed of the films has been investigated using a dual laser system to write and read the marks created in the films. A 658nm diode laser focussed through a 0.65NA objective was used to deliver pulses with incident optical powers up to 130mW and pulse time ranging from 5ns to 1µs. The change in reflectivity of the samples was measured using the same objective and a 635nm diode with an incident power of 20mW. This type of device is commonly known as a static tester.
Simpson, Robert
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Huang, Chung-Che
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Liu, C.J.
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Tai, C.Y.
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Hewak, Daniel
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Simpson, Robert
2b7dcf98-8712-46bf-ac32-8782a9955aef
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Liu, C.J.
694ab140-1894-43ec-919e-bcb9a0eef9b7
Tai, C.Y.
5ce36f32-5d16-4c47-971f-ce5b86092061
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Simpson, Robert, Huang, Chung-Che, Liu, C.J., Tai, C.Y. and Hewak, Daniel (2007) Nano-scale sulphide phase change materials and applications. Nanoscale Physics and Technology, Southampton, UK. 25 - 26 Mar 2007. 2 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

Sulphur-based phase change materials have been investigated for potential nano-scale electrical phase change memories. These materials are stable in both there crystalline and amorphous phases. Switching is achieved by either melting the material to form an amorphous area or heating above its crystallisation temperature. This can be achieved through Joule heating by application of an energy pulse in the form of an electrical current or laser heating. In this work the switching speed of the films has been investigated using a dual laser system to write and read the marks created in the films. A 658nm diode laser focussed through a 0.65NA objective was used to deliver pulses with incident optical powers up to 130mW and pulse time ranging from 5ns to 1µs. The change in reflectivity of the samples was measured using the same objective and a 635nm diode with an incident power of 20mW. This type of device is commonly known as a static tester.

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More information

e-pub ahead of print date: March 2007
Published date: 2007
Venue - Dates: Nanoscale Physics and Technology, Southampton, UK, 2007-03-25 - 2007-03-26
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 47774
URI: http://eprints.soton.ac.uk/id/eprint/47774
PURE UUID: ec19a5f0-cd3c-4260-bf03-ddb31fc7e8d2
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 09 Aug 2007
Last modified: 17 Jun 2021 01:39

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Contributors

Author: Robert Simpson
Author: Chung-Che Huang ORCID iD
Author: C.J. Liu
Author: C.Y. Tai
Author: Daniel Hewak ORCID iD

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