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Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass

Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)β], where τ is the fluorescence lifetime and β is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30µs and 67µs respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical doping concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/τ1)+ b*exp-(t/τ2), where τ1 and τ2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5µs and 30µs respectively and for titanium they are 15µs and 67µs respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host; gallium lanthanum oxy-sulphide (GLSO) is 43µs and 97µs respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled.
Hughes, M.
3544b2a0-06e1-4060-beb5-57543a230a03
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Jiang, Shibin
b06fa062-1c76-4ebc-baf1-e810b245bafc
Digonnet, Michel J.F.
beb8ed0c-fc98-4db0-ad97-a06e81eed865
Hughes, M.
3544b2a0-06e1-4060-beb5-57543a230a03
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Jiang, Shibin
b06fa062-1c76-4ebc-baf1-e810b245bafc
Digonnet, Michel J.F.
beb8ed0c-fc98-4db0-ad97-a06e81eed865

Hughes, M., Hewak, D.W. and Curry, R.J. (2007) Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass. Jiang, Shibin and Digonnet, Michel J.F. (eds.) OPTO 2007, San Jose, USA. 20 - 25 Jan 2007. (doi:10.1117/12.699134).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)β], where τ is the fluorescence lifetime and β is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30µs and 67µs respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical doping concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/τ1)+ b*exp-(t/τ2), where τ1 and τ2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5µs and 30µs respectively and for titanium they are 15µs and 67µs respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host; gallium lanthanum oxy-sulphide (GLSO) is 43µs and 97µs respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled.

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Published date: February 2007
Venue - Dates: OPTO 2007, San Jose, USA, 2007-01-20 - 2007-01-25

Identifiers

Local EPrints ID: 47833
URI: http://eprints.soton.ac.uk/id/eprint/47833
PURE UUID: 1c6d6996-2868-460e-ade0-92168060735b
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 13 Aug 2007
Last modified: 15 Mar 2024 09:38

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Contributors

Author: M. Hughes
Author: D.W. Hewak ORCID iD
Author: R.J. Curry
Editor: Shibin Jiang
Editor: Michel J.F. Digonnet

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