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Germanium sulphide and antimony germanium sulphide glass thin films fabricated by chemical vapour deposition

Huang, Chung-Che, Knight, Kenton and Hewak, Daniel (2006) Germanium sulphide and antimony germanium sulphide glass thin films fabricated by chemical vapour deposition At 1st International Congress on Ceramics. 25 - 29 Jun 2006.

Record type: Conference or Workshop Item (Paper)

Abstract

Germanium sulphide glass thin films have been successfully fabricated directly by the chemical vapour deposition (CVD) process. The precursor, germanium tetrachloride, was used to react with hydrogen sulphide to form germanium sulphide glass thin films on some selected substrates at the temperatures ranging from 450°C to 600°C. By introducing another antimony pentachloride precursor to the above CVD system, a ternary antimony germanium sulphide (Sb-Ge-S) glass thin films can be deposited on some selected substrates at temperatures in the range of 1200°C-400°C and the composition of these Sb-Ge-S glass thin films can be tuned by the selection of different deposition temperatures. These germanium sulphide and antimony germanium sulphide glass thin films have been characterized by micro-Raman, scanning electron microscopy, e-tlergy dispersive X-ray analysis and X-ray diffraction techniques. The CVD technique has been shown a very promising process to fabricate high quality chalcogenide thin films for optical waveguide and device applications.

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More information

Published date: June 2006
Venue - Dates: 1st International Congress on Ceramics, 2006-06-25 - 2006-06-29
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 47864
URI: http://eprints.soton.ac.uk/id/eprint/47864
PURE UUID: cfc70491-9b2b-4f08-8252-8bbf19ac758c
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 15 Aug 2007
Last modified: 17 Jul 2017 15:02

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Contributors

Author: Chung-Che Huang ORCID iD
Author: Kenton Knight
Author: Daniel Hewak ORCID iD

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