High-efficiency reflector-less dual-level silicon photonic grating coupler
High-efficiency reflector-less dual-level silicon photonic grating coupler
We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer. The proposed device consists of two grating levels designed with two different linear apodizations, with opposite chirping signs, and whose period is varied for each scattering unit. A coupling efficiency of −0.8 dB at 1550 nm is experimentally demonstrated, which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or index-matching material between the fiber and the grating.
1275-1283
Vitali, Valerio
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Domínguez Bucio, Thalía
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Lacava, Cosimo
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Marchetti, Riccardo
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Mastronardi, Lorenzo
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Rutirawut, Teerapat
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Churchill, Glenn
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Faneca, Joaquin
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Gates, James C.
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Gardes, Frederic
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Petropoulos, Periklis
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26 June 2023
Vitali, Valerio
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Domínguez Bucio, Thalía
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Lacava, Cosimo
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Marchetti, Riccardo
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Mastronardi, Lorenzo
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Rutirawut, Teerapat
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Churchill, Glenn
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Faneca, Joaquin
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Gates, James C.
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Gardes, Frederic
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Petropoulos, Periklis
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Vitali, Valerio, Domínguez Bucio, Thalía, Lacava, Cosimo, Marchetti, Riccardo, Mastronardi, Lorenzo, Rutirawut, Teerapat, Churchill, Glenn, Faneca, Joaquin, Gates, James C., Gardes, Frederic and Petropoulos, Periklis
(2023)
High-efficiency reflector-less dual-level silicon photonic grating coupler.
Photonics Research, 11 (7), .
(doi:10.1364/PRJ.488970).
Abstract
We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer. The proposed device consists of two grating levels designed with two different linear apodizations, with opposite chirping signs, and whose period is varied for each scattering unit. A coupling efficiency of −0.8 dB at 1550 nm is experimentally demonstrated, which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or index-matching material between the fiber and the grating.
Text
prj-11-7-1275
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Accepted/In Press date: 6 May 2023
Published date: 26 June 2023
Identifiers
Local EPrints ID: 478784
URI: http://eprints.soton.ac.uk/id/eprint/478784
ISSN: 2327-9125
PURE UUID: ade80831-70f6-49e8-9801-b589519c6b0c
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Date deposited: 10 Jul 2023 16:43
Last modified: 18 Mar 2024 02:52
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Contributors
Author:
Valerio Vitali
Author:
Cosimo Lacava
Author:
Riccardo Marchetti
Author:
Lorenzo Mastronardi
Author:
Glenn Churchill
Author:
Joaquin Faneca
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