RREAD ME File For 'Dataset for Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films'

Dataset DOI: 10.5258/SOTON/D2440

ReadMe Author: Ruomeng Huang, University of Southampton 

This dataset supports the publication: Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films
AUTHORS: Ayoub H. Jaafar, Lingcong Meng, Tongjun Zhang, Dongkai Guo, Daniel Newbrook, Wenjian Zhang, Gillian Reid, C.H. (Kees) de Groot, Philip N. Bartlett, and Ruomeng Huang
TITLE: Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films
JOURNAL: ACS Applied Nano Materials
PAPER DOI IF KNOWN: https://doi.org/10.1021/acsanm.2c03639


This dataset contains:
The raw data of figure 2 to 9.

The figures are as follows:

Figure 2. Figure 2 (a) Cyclic voltammogram of the 4 mm diameter TiN/SiO2/Si substrate in 0.1 M [NnBu4]Cl
electrolyte containing 2.5 mM [NnBu4]GeCl5, 1 mM [NnBu4]SbCl4, 2 mM [NnBu4]2TeCl6. Scan
rate: 50 mV s-1. (b) Current time transient for GeSbTe electrodeposition at a deposition potential
of -1.75 V vs Ag/AgCl. The cut-off charge is -5 μC. (c) EDX spectrum of the electrodeposited
GeSbTe on a Si substrate showing the presence of Ge, Sb, and Te within the thin film. (d) Top
SEM image for GeSbTe thin film (e) AFM image of GeSbTe thin film. (f) AFM image of
PMMA(50%)/GeSbTe bilayer.

Figure 3. Figure 3 (a) Schematic of hybrid memristor devices. (b) I-V characteristics of a memristor consisting of a GeSbTe thin film (without PMMA) sandwiched between TiN and Ag electrodes, Ag/GeSbTe/TiN. (c-f) I-V characteristics of memristor consisting of hybrid PMMA/GeSbTe bilayer, Ag/PMMA/GeSbTe/TiN, with different concentrations of PMMA. The PMMA concentrations are 20% (c), 25% (d), 33% (e), and 50% (f).


Figure 4. Figure 4 Resistive switching characteristics of hybrid Ag/PMMA/GeSbTe/TiN memristor devices on Si substrate. (a) OFF current versus PMMA concentration; (b) ON current versus PMMA concentration; (c) Power consumption versus PMMA concentration; (d) ON/OFF ratio versus PMMA concentration. The OFF and ON currents and the ON/OFF resistance ratio were taken at a read voltage of 0.1 V.


Figure 5. Figure 5 Current−Voltage curves demonstrating fits to the SCLC mechanism for the HRS to LRS transition for a Ag/GeSbTe/TiN memristor device (a) and a hybrid Ag/PMMA/GeSbTe/TiN memristor device (50% PMMA) (b) both fabricated on Si substrates.


Figure 6. Figure 6 Schematic showing the proposed switching mechanism for (a) the single GeSbTe memristor and (b) the hybrid PMMA/GeSbTe memristor.

Figure 7. Figure 7 (a) I-V characteristics of a Ag/PMMA/GeSbTe/TiN memristor (50% PMMA) for different CC. (b) DC endurance of the device showing the reproducible multi-state resistance behavior under different CCs.

Figure 8. Figure 8 (a) CV of the 4 mm diameter TiN/polyimide substrate in 0.1 M [NnBu4]Cl electrolyte containing 2.5 mM [NnBu4][GeCl5], 1 mM [NnBu4][SbCl4], 2 mM [NnBu4]2[TeCl6]. Scan rate: 50 mV s-1. (b) Current time transient for GeSbTe electrodeposition on polyimide substrate at deposition potential of -1.75 V vs Ag/AgCl. The cut-off charge is -5 µC. (c) EDX spectrum of the electrodeposited GeSbTe on polyimide substrate showing the existence of Ge, Sb, and Te within the thin film. (d) SEM image of the GeSbTe thin film on TiN/polyimide substrate. 

Figure 9. Figure 9 (a) A real photo image of a hybrid flexible memristor under bending radius (R) of 15 mm. (b) I-V resistive switching characteristics of a flexible Ag/PMMA/GeSbTe/TiN device before bending (black curve), during bending (blue curve) and after bending (red curve). (c) Endurance characteristics of the device at a read voltage of 0.5 V. (d) Cumulative probability of HRS and LRS, and (e) VSET and VRESET. (f) Retention test for the device after bending at a read voltage of 0.5 V.


Date of data collection: October 2020 to April 2022

Information about geographic location of data collection: United Kingdom

Licence: CC-BY

Related projects: This work is part of the ADEPT project funded by a Programme Grant from the EPSRC (EP/N035437/1). 


Date that the file was created: Nov, 2022