READ ME File For 'Dataset for Thin film thermoelectric materials and generators deposited by chemical vapour processes'

ReadMe Author: Vikesh Sethi, University of Southampton 

This dataset supports the Doctoral Thesis: Thin film thermoelectric materials and generators deposited by chemical vapour processes
AUTHORS: V. Sethi
TITLE: Thin film thermoelectric materials and generators deposited by chemical vapour processes
DOI: https://doi.org/10.5258/SOTON/D2713


This dataset contains:
The raw data of figure 4.5 to 6.14.

The figures are as follows:

Figure 4.5.  The EDX spectra of the GeTe films deposited by LPCVD at temperaturesof (a) 336◦C, (b) 386◦C, (c) 425◦C and (d) 452◦C onto silica substrates.
Figure 4.6.  (a) XRD patterns of as-deposited GeTe films deposited by LPCVD at different temperatures. (b) Refined lattice parameters as a function of deposition temperature (TDep)for the as-deposited GeTe thin films. The dotted lines represent the lattice parameter values from ref [218].
Figure 4.7.  (a) The Raman spectrum for GeTe thin films deposited by LPCVD at different temperatures. (b) The peak positions of the A1g mode of the GeTe films as a function of deposition temperature.
Figure 4.8.  Temperature-dependent (a) electrical conductivity, (b) Hall carrier concentration, and (c) Hall mobility of the GeTe films deposited by LPCVD at different temperatures; (d) Hall mobility of the GeTe films as a function of crystallite size.
Figure 4.9.  (a) Temperature-dependent in-plane Seebeck coefficient of the GeTe films deposited by LPCVD at different temperatures. (b) Pisarenko plot of the GeTe films at room temperature.
Figure 4.10. Temperature-dependent (a) Lorentz number, (b) total thermal conductivity of the GeTe films deposited by LPCVD at different temperatures, (c) in-plane power factors, and (d) estimated ZT values of the GeTe films deposited by LPCVD at different temperatures.
Figure 4.12. (a) IV and (b) IP curves of the fabricated GeTe µ-TEG. (c) The open circuit voltage against the temperature difference (∆T) to determine the device’s effective Seebeck coefficient. (d) A linearised plot of device power output against ∆T2 to determine the specific power generation density.


Figure 5.4.  (a) Grazing incidence X-ray diffraction patterns of the as-deposited WS2xSe2−2x films from (1)-(4), together with reference XRD patterns for both WS2 and WSe2 (black) [201; 231]. (b) An expansion of the range 13◦ and 15◦ to illustrate the shift of the 002 peaks.
Figure 5.5.  (b) Raman spectral scan presented over a range of 50-450 cm-1, of the as-deposited WS2xSe2-2x. films.
Figure 5.6.  Survey scans over the range 0 -700 eV for all as-deposited WS2xSe2−2x films deposited from precursors (1)-(4), with the atomic orbitals labelled. The remaining peaks are related to Auger electron detection.
Figure 5.7.  Elemental XPS scans of (a) W 4f, (b) Se 3d and (c) S 2p for all as-deposited WS2xSe2−2x films deposited from precursors (1)–(4).
Figure 5.8.  Composition of all the as-deposited WS2xSe2−2x films deposited from precursors (1)–(4).
Figure 5.9.  (a) Temperature-dependent electrical conductivity, (b) Arrhenius plot for films deposited from precursors (1)-(4). (c) Electrical conductivity and (d) Hall measurements against the chalcogenide content of the films.
Figure 5.10. Temperature-dependent (a) Seebeck, and (b) power factor measurements for the WS2xSe2-2x films deposited from precursors (1)-(4).
Figure 5.11. (a) Carrier concentration and (b) carrier mobility of the as-deposited binary films, WS2 (red) and WSe2 (orange). Compared with the films annealed at 500oC in the respective chalcogenide atmospheres.
Figure 5.12.  Temperature-dependent (a) in-plane electrical conductivity, (b) in-plane Seebeck coefficient, (c) in-plane power factors. Temperature-dependent (d) Lorentz number, estimated from the empirical formula as described by the relation in Equation 2.8. (e) The estimated total thermal conductivity assuming a lattice contribution of 4 W/mK and (f) estimated ZT values of the WS2 film deposited by LPCVD.


Figure 6.8.  (a) XRD patterns of the AZO thin films deposited by PE-ALD with a range of O2 plasma treatment times. (b) An enlarged view of the XRD spectra in the range of 30◦ to 38◦ to give insight into the observed peak shift. (c) The refined lattice parameters as a function of in-situ O2 plasma treatment time (tc). The dotted lines represent the lattice parameter values from ref [261].
Figure 6.9.  The derived crystallite sizes via the Williamson-Hall method as a function of in-situ O2 plasma treatment time (tc).
Figure 6.10. Variable temperature measurements of (d) electrical conductivity (σ), (e) carrier mobility (µ) (f) carrier concentration (ne).
Figure 6.11. (b) Variable temperature Seebeck measurements in the range of 300–575K. (d) The power factor of the AZO thin films deposited by PE-ALD with varying tc.
Figure 6.12. (c) temperature oscillations, and (d) cross-plane thermal conductivity of the various Al-doped ZnO thin films deposited by PE-ALD with varying in-situ O2 plasma times.
Figure 6.13. Simulated (shaded) and experimental (circles) (a) IV and (b) IP curves for our fabricated thin-film TEG.
Figure 6.14. (a) The open circuit voltage against the temperature difference (∆T) to determine the device’s effective Seebeck coefficient. (b) A linearised plot of device power output against the ∆T2 to determine the specific power generation density.

Date of data collection: October 2019 to October 2022

Information about geographic location of data collection: United Kingdom

Licence: No

Related projects: 

Date that the file was created: July, 2023