READ ME File For 'Datatset for Ultra-low thermal conductivity and improved thermoelectric properties of Al-doped ZnO by in-situ O2 plasma treatment'
Dataset DOI: https://doi.org/10.5258/SOTON/D2674

ReadMe Author: Vikesh Sethi, University of Southampton 

This dataset supports the publication: Ultra-low thermal conductivity and improved thermoelectric properties of Al-doped ZnO by in-situ O2 plasma treatment


AUTHORS: V. Sethi, K. Sun, D. Newbrook,  D. Runacres, T. Zhang ,V. Greenacre, C. H. de Groot, and R. Huang
TITLE: Ultra-low thermal conductivity and improved thermoelectric properties of Al-doped ZnO by in-situ O2 plasma treatment
JOURNAL: Small Structures
DOI: https://doi.org/10.1002/sstr.202300140

This dataset contains:
The raw data of figure 4 to 8.

The figures are as follows:

Figure 4. (a) XRD patterns of the AZO thin films deposited by PE-ALD with a range of O2 plasma treatment times. (b) An enlarged view of the XRD spectra in the range of 30o to 38o to give insight into the observed peak shift. (c) The refined lattice parameters as a function of in-situ O2 plasma treatment time (tc). The dotted lines represent the lattice parameter values from ref [51]. (d) The derived crystallite sizes via the Williamson-Hall method as a function of in-situ O2 plasma treatment time (tc).


Figure 5. (b) The in-phase (dots) and out-of-phase (circles) third harmonic voltages (V3ω), (c) thermal conductivity of the various Al-doped ZnO thin films deposited by PE-ALD with varying in-situ O2 plasma times.

Figure 6. Variable temperature measurements of (a) electrical conductivity (σ), (b) carrier mobility (μ), and (c) carrier concentration (ne). (d) Variable temperature measurements of the absolute Seebeck coefficient (S) in the range of 300–575K.


Figure 7. Variable temperature (a) power factor (PF) and (b) ZT of the AZO thin films deposited by PE-ALD with varying tc. ZT values at variable temperatures are estimated under the assumption that thermal conductivity does not vary significantly over the temperature range.

Figure 8. (a) Optical image of the fabricated lateral TEG (b) IR images to indicate the temperature difference applied across the fabricated device. Simulated (shaded) and experimental (circles) (c) I-V and (d) I-P curves for our fabricated thin-film TEG. (e) The open circuit voltage and (f) power output against the temperature difference (ΔT). 

Date of data collection: May 2021 to October 2022

Information about geographic location of data collection: United Kingdom

Licence: CC-BY


Date that the file was created: June, 2023