1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband
1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband
The 2 µm waveband, specifically near 1.9 µm, is an imperative resource that could possibly be exploited in future communications systems. This is due to the promising infrastructural developments at the wavelength region (hollow-core photonic bandgap fiber, thulium-doped fiber amplifier) near 1.9 µm. In this work, we report the 1 × N selector switch based on Mach-Zehnder interferometers operating near the 1.9 µm wavelength region. As an elementary cell (N = 2), an insertion loss as low as 1.1 dB, Pπ of 23 mW, 10-90 % switching time of lower than 38 µs and a crosstalk of lower than -25 dB from 1880 to 1955 nm has been determined. In order to prove scalability, the 1 × 8 switch (N = 8) is demonstrated, indicating crosstalk as low as -21 dB, considering all possible switching configurations across the abovementioned wavelength region. Insertion loss levels are examined.
2 μm waveband, Silicon photonics, integrated optics, optical switching, thermo-optic switch
1127-1130
Sia, Jia Xu Brian
ebffd3f7-e307-4588-9535-ed467ad9847b
Li, Xiang
3e4a386b-ffac-4d2a-8eb6-e183cd1f37ff
Qiao, Zhongliang
b331e792-f9de-4c8c-9f45-26023b736ab6
Guo, Xin
c1da16ff-f2d9-4500-92c7-aafb401efab8
Zhou, Jin
614f5ebf-cf64-4299-b6d3-aee0e91eba8b
Littlejohns, Callum G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Liu, Chongyang
28ec0e52-d3f6-4bc4-bce1-29d6842267df
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, Wanjun
79108a43-c2a9-4a18-9aeb-8a9b45941dd0
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
15 September 2020
Sia, Jia Xu Brian
ebffd3f7-e307-4588-9535-ed467ad9847b
Li, Xiang
3e4a386b-ffac-4d2a-8eb6-e183cd1f37ff
Qiao, Zhongliang
b331e792-f9de-4c8c-9f45-26023b736ab6
Guo, Xin
c1da16ff-f2d9-4500-92c7-aafb401efab8
Zhou, Jin
614f5ebf-cf64-4299-b6d3-aee0e91eba8b
Littlejohns, Callum G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Liu, Chongyang
28ec0e52-d3f6-4bc4-bce1-29d6842267df
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, Wanjun
79108a43-c2a9-4a18-9aeb-8a9b45941dd0
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Sia, Jia Xu Brian, Li, Xiang, Qiao, Zhongliang, Guo, Xin, Zhou, Jin, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Wang, Wanjun and Wang, Hong
(2020)
1 × N (N = 2, 8) Silicon selector switch for prospective technologies at the 2 μm waveband.
IEEE Photonics Technology Letters, 32 (18), .
(doi:10.1109/LPT.2020.3014204).
Abstract
The 2 µm waveband, specifically near 1.9 µm, is an imperative resource that could possibly be exploited in future communications systems. This is due to the promising infrastructural developments at the wavelength region (hollow-core photonic bandgap fiber, thulium-doped fiber amplifier) near 1.9 µm. In this work, we report the 1 × N selector switch based on Mach-Zehnder interferometers operating near the 1.9 µm wavelength region. As an elementary cell (N = 2), an insertion loss as low as 1.1 dB, Pπ of 23 mW, 10-90 % switching time of lower than 38 µs and a crosstalk of lower than -25 dB from 1880 to 1955 nm has been determined. In order to prove scalability, the 1 × 8 switch (N = 8) is demonstrated, indicating crosstalk as low as -21 dB, considering all possible switching configurations across the abovementioned wavelength region. Insertion loss levels are examined.
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More information
Published date: 15 September 2020
Keywords:
2 μm waveband, Silicon photonics, integrated optics, optical switching, thermo-optic switch
Identifiers
Local EPrints ID: 479084
URI: http://eprints.soton.ac.uk/id/eprint/479084
ISSN: 1041-1135
PURE UUID: 982617cc-1321-401e-b7dd-4d5e10eb5dee
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Date deposited: 20 Jul 2023 16:31
Last modified: 16 Mar 2024 23:50
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Contributors
Author:
Jia Xu Brian Sia
Author:
Xiang Li
Author:
Zhongliang Qiao
Author:
Xin Guo
Author:
Jin Zhou
Author:
Callum G. Littlejohns
Author:
Chongyang Liu
Author:
Graham T. Reed
Author:
Wanjun Wang
Author:
Hong Wang
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