Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μm × 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.
Haws, Cori
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Guha, Biswarup
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Perez, Edgar
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Davanco, Marcelo
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Song, Jin Dong
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Srinivasan, Kartik
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Sapienza, Luca
a2e0cf6c-1f22-4a5a-87a2-ffab0e24e6ac
19 April 2022
Haws, Cori
a9c80ee5-38e3-4701-9c42-14414d3dc087
Guha, Biswarup
712b5e84-3c3b-41fc-acb1-ba6201151640
Perez, Edgar
b70b1966-65d7-45a4-9ebc-14297ced4133
Davanco, Marcelo
47402497-a901-4657-9bdc-1517835297a6
Song, Jin Dong
b00beeb7-a2e4-40db-ab22-d3fab6bb21a9
Srinivasan, Kartik
419dfd1a-2440-44de-9530-7aaa9383bc15
Sapienza, Luca
a2e0cf6c-1f22-4a5a-87a2-ffab0e24e6ac
Haws, Cori, Guha, Biswarup, Perez, Edgar, Davanco, Marcelo, Song, Jin Dong, Srinivasan, Kartik and Sapienza, Luca
(2022)
Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters.
Materials for Quantum Technology, 2 (2), [025003].
(doi:10.1088/2633-4356/ac603e).
Abstract
The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μm × 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.
Text
Haws_2022_Mater._Quantum_Technol._2_025003
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Accepted/In Press date: 23 March 2022
Published date: 19 April 2022
Identifiers
Local EPrints ID: 479757
URI: http://eprints.soton.ac.uk/id/eprint/479757
PURE UUID: a47768fd-ae90-4780-a778-df583e13b220
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Date deposited: 26 Jul 2023 16:56
Last modified: 17 Mar 2024 03:58
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Contributors
Author:
Biswarup Guha
Author:
Edgar Perez
Author:
Marcelo Davanco
Author:
Jin Dong Song
Author:
Kartik Srinivasan
Author:
Luca Sapienza
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