Improved photosensitive response of doped silica to a 213 nm pulsed laser using a multi-pass writing approach
Improved photosensitive response of doped silica to a 213 nm pulsed laser using a multi-pass writing approach
Direct UV writing enables the fabrication of waveguides [1] and Bragg gratings in doped planar silica [2], achieving a change in the refractive index of 5.1×10-3 [3]. This index change is smaller in comparison with etched devices; therefore, finding routes to improve the photosensitivity response in doped silica is essential. However, the photosensitive response of doped silica to pulsed 213 nm laser writing is more complex than with a 244 nm CW argon-ion laser, and can lead to damage when operating at higher peak powers [4]. Here we present a new writing approach where UV radiative fluence is deposited over multiple passes, reducing the peak fluence. The multi-pass writing approach significantly increases the induced change in the effective index and grating's strength.
We used small-spot direct UV writing (see Fig. 1(a and b)) to fabricate channel waveguides and gratings simultaneously in hydrogen-loaded doped FHD silica [2]. A total laser fluence of 1 kJ cm−2 was used for all devices; however, these ranged from 1 pass at 1 kJ cm−2 to 100 passes at 0.01 kJ cm−2. Fig.1(c) illustrates the reflection spectra of the 4-mm long uniform grating written in a single pass and over-written in 20 and 40 passes; showing broadening and a significant red shift in the central wavelength of overwritten gratings compared to those written in a single pass. Fig. 1(d) plots the variation in neff and ∆nac for the gratings written at a net fluence of 1 kJ cm−2 in different passes. Increasing the number of writing passes from 1 to 100; we observe a 1.4×10−3 increase in the effective refractive index of the gratings compared to those written in a single pass. Similarly, we perceive a significant increase in the grating's strength by increasing the number of passes to 40; the achieved ∆nac of gratings written in 40 passes is 1.6 times higher than those written in a single pass. A further increase in writing passes (beyond 40) leads to reduced grating strength, possibly due to the limitations associated with the dynamics of the UV writing interferometer and air-bearing stages. The multi-pass writing significantly improves the time limitations of fabrication by reducing the artefacts of hydrogen outgassing. We will present in-depth investigations on the photosensitive response of doped silica to multi-pass writing at different laser powers and fluences.
Ahmed, Salman
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Field, James W.
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Gow, Paul C.
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Holmes, Christopher
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Bannerman, Rex
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Mennea, Paolo
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Gawith, Corin
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Smith, Peter G.R.
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Gates, James C.
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29 June 2023
Ahmed, Salman
2a627fc7-aca4-4380-85d8-90349bbf9e2b
Field, James W.
87ce1146-333d-489c-839d-b6f654049abc
Gow, Paul C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Holmes, Christopher
16306bb8-8a46-4fd7-bb19-a146758e5263
Bannerman, Rex
7f7d5c3e-8e5d-45d5-8fd7-8d1511330e08
Mennea, Paolo
d994ba05-bcc1-4be3-8ba1-439fb1535a3f
Gawith, Corin
926665c0-84c7-4a1d-ae19-ee6d7d14c43e
Smith, Peter G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Gates, James C.
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Ahmed, Salman, Field, James W., Gow, Paul C., Holmes, Christopher, Bannerman, Rex, Mennea, Paolo, Gawith, Corin, Smith, Peter G.R. and Gates, James C.
(2023)
Improved photosensitive response of doped silica to a 213 nm pulsed laser using a multi-pass writing approach.
2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, International Congress Centre Munich, Munich, Germany.
26 - 30 Jun 2023.
1 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Direct UV writing enables the fabrication of waveguides [1] and Bragg gratings in doped planar silica [2], achieving a change in the refractive index of 5.1×10-3 [3]. This index change is smaller in comparison with etched devices; therefore, finding routes to improve the photosensitivity response in doped silica is essential. However, the photosensitive response of doped silica to pulsed 213 nm laser writing is more complex than with a 244 nm CW argon-ion laser, and can lead to damage when operating at higher peak powers [4]. Here we present a new writing approach where UV radiative fluence is deposited over multiple passes, reducing the peak fluence. The multi-pass writing approach significantly increases the induced change in the effective index and grating's strength.
We used small-spot direct UV writing (see Fig. 1(a and b)) to fabricate channel waveguides and gratings simultaneously in hydrogen-loaded doped FHD silica [2]. A total laser fluence of 1 kJ cm−2 was used for all devices; however, these ranged from 1 pass at 1 kJ cm−2 to 100 passes at 0.01 kJ cm−2. Fig.1(c) illustrates the reflection spectra of the 4-mm long uniform grating written in a single pass and over-written in 20 and 40 passes; showing broadening and a significant red shift in the central wavelength of overwritten gratings compared to those written in a single pass. Fig. 1(d) plots the variation in neff and ∆nac for the gratings written at a net fluence of 1 kJ cm−2 in different passes. Increasing the number of writing passes from 1 to 100; we observe a 1.4×10−3 increase in the effective refractive index of the gratings compared to those written in a single pass. Similarly, we perceive a significant increase in the grating's strength by increasing the number of passes to 40; the achieved ∆nac of gratings written in 40 passes is 1.6 times higher than those written in a single pass. A further increase in writing passes (beyond 40) leads to reduced grating strength, possibly due to the limitations associated with the dynamics of the UV writing interferometer and air-bearing stages. The multi-pass writing significantly improves the time limitations of fabrication by reducing the artefacts of hydrogen outgassing. We will present in-depth investigations on the photosensitive response of doped silica to multi-pass writing at different laser powers and fluences.
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Published date: 29 June 2023
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2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, International Congress Centre Munich, Munich, Germany, 2023-06-26 - 2023-06-30
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Local EPrints ID: 479820
URI: http://eprints.soton.ac.uk/id/eprint/479820
PURE UUID: d86f630a-7e51-4f86-9bee-684696b03a80
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Date deposited: 27 Jul 2023 13:43
Last modified: 18 Mar 2025 03:00
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