Improved photosensitive response of doped silica to a 213 nm pulsed laser using a multi-pass writing approach
Improved photosensitive response of doped silica to a 213 nm pulsed laser using a multi-pass writing approach
Direct UV writing enables the fabrication of waveguides [1] and Bragg gratings in doped planar silica [2], achieving a change in the refractive index of 5.1×10-3 [3]. This index change is smaller in comparison with etched devices; therefore, finding routes to improve the photosensitivity response in doped silica is essential. However, the photosensitive response of doped silica to pulsed 213 nm laser writing is more complex than with a 244 nm CW argon-ion laser, and can lead to damage when operating at higher peak powers [4]. Here we present a new writing approach where UV radiative fluence is deposited over multiple passes, reducing the peak fluence. The multi-pass writing approach significantly increases the induced change in the effective index and grating's strength.
We used small-spot direct UV writing (see Fig. 1(a and b)) to fabricate channel waveguides and gratings simultaneously in hydrogen-loaded doped FHD silica [2]. A total laser fluence of 1 kJ cm−2 was used for all devices; however, these ranged from 1 pass at 1 kJ cm−2 to 100 passes at 0.01 kJ cm−2. Fig.1(c) illustrates the reflection spectra of the 4-mm long uniform grating written in a single pass and over-written in 20 and 40 passes; showing broadening and a significant red shift in the central wavelength of overwritten gratings compared to those written in a single pass. Fig. 1(d) plots the variation in neff and ∆nac for the gratings written at a net fluence of 1 kJ cm−2 in different passes. Increasing the number of writing passes from 1 to 100; we observe a 1.4×10−3 increase in the effective refractive index of the gratings compared to those written in a single pass. Similarly, we perceive a significant increase in the grating's strength by increasing the number of passes to 40; the achieved ∆nac of gratings written in 40 passes is 1.6 times higher than those written in a single pass. A further increase in writing passes (beyond 40) leads to reduced grating strength, possibly due to the limitations associated with the dynamics of the UV writing interferometer and air-bearing stages. The multi-pass writing significantly improves the time limitations of fabrication by reducing the artefacts of hydrogen outgassing. We will present in-depth investigations on the photosensitive response of doped silica to multi-pass writing at different laser powers and fluences.
Ahmed, Salman
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Field, James W.
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Gow, Paul C.
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Holmes, Christopher
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Bannerman, Rex
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Mennea, Paolo
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Gawith, Corin
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Smith, Peter G R
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Gates, James C.
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29 June 2023
Ahmed, Salman
2a627fc7-aca4-4380-85d8-90349bbf9e2b
Field, James W.
87ce1146-333d-489c-839d-b6f654049abc
Gow, Paul C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Holmes, Christopher
16306bb8-8a46-4fd7-bb19-a146758e5263
Bannerman, Rex
7f7d5c3e-8e5d-45d5-8fd7-8d1511330e08
Mennea, Paolo
d994ba05-bcc1-4be3-8ba1-439fb1535a3f
Gawith, Corin
926665c0-84c7-4a1d-ae19-ee6d7d14c43e
Smith, Peter G R
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Gates, James C.
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Ahmed, Salman, Field, James W., Gow, Paul C., Holmes, Christopher, Bannerman, Rex, Mennea, Paolo, Gawith, Corin, Smith, Peter G R and Gates, James C.
(2023)
Improved photosensitive response of doped silica to a 213 nm pulsed laser using a multi-pass writing approach.
2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, International Congress Centre Munich, Munich, Germany.
26 - 30 Jun 2023.
1 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Direct UV writing enables the fabrication of waveguides [1] and Bragg gratings in doped planar silica [2], achieving a change in the refractive index of 5.1×10-3 [3]. This index change is smaller in comparison with etched devices; therefore, finding routes to improve the photosensitivity response in doped silica is essential. However, the photosensitive response of doped silica to pulsed 213 nm laser writing is more complex than with a 244 nm CW argon-ion laser, and can lead to damage when operating at higher peak powers [4]. Here we present a new writing approach where UV radiative fluence is deposited over multiple passes, reducing the peak fluence. The multi-pass writing approach significantly increases the induced change in the effective index and grating's strength.
We used small-spot direct UV writing (see Fig. 1(a and b)) to fabricate channel waveguides and gratings simultaneously in hydrogen-loaded doped FHD silica [2]. A total laser fluence of 1 kJ cm−2 was used for all devices; however, these ranged from 1 pass at 1 kJ cm−2 to 100 passes at 0.01 kJ cm−2. Fig.1(c) illustrates the reflection spectra of the 4-mm long uniform grating written in a single pass and over-written in 20 and 40 passes; showing broadening and a significant red shift in the central wavelength of overwritten gratings compared to those written in a single pass. Fig. 1(d) plots the variation in neff and ∆nac for the gratings written at a net fluence of 1 kJ cm−2 in different passes. Increasing the number of writing passes from 1 to 100; we observe a 1.4×10−3 increase in the effective refractive index of the gratings compared to those written in a single pass. Similarly, we perceive a significant increase in the grating's strength by increasing the number of passes to 40; the achieved ∆nac of gratings written in 40 passes is 1.6 times higher than those written in a single pass. A further increase in writing passes (beyond 40) leads to reduced grating strength, possibly due to the limitations associated with the dynamics of the UV writing interferometer and air-bearing stages. The multi-pass writing significantly improves the time limitations of fabrication by reducing the artefacts of hydrogen outgassing. We will present in-depth investigations on the photosensitive response of doped silica to multi-pass writing at different laser powers and fluences.
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Published date: 29 June 2023
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2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, International Congress Centre Munich, Munich, Germany, 2023-06-26 - 2023-06-30
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Local EPrints ID: 479820
URI: http://eprints.soton.ac.uk/id/eprint/479820
PURE UUID: d86f630a-7e51-4f86-9bee-684696b03a80
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Date deposited: 27 Jul 2023 13:43
Last modified: 16 Apr 2024 01:44
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