High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions
High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions
This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4 to 1.9 V/cm range are demonstrated for drive voltages between 0 V and 6 V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the center of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the center of the waveguide. Finally, we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.
52 Gb/s, Carrier depletion, Electro-optic modulator, Mach-Zehnder, Silicon photonics
1-5
Reed, Graham T.
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Thomson, David J.
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Gardes, Frederic Y.
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Hu, Youfang
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Fedeli, Jean Marc
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Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Fedeli, Jean Marc
5ad7c53a-9334-4b13-bd8e-9bef92753030
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T., Thomson, David J., Gardes, Frederic Y., Hu, Youfang, Fedeli, Jean Marc and Mashanovich, Goran Z.
(2014)
High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions.
Frontiers in Physics, 2, , [A075].
(doi:10.3389/fphy.2014.00077).
Abstract
This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4 to 1.9 V/cm range are demonstrated for drive voltages between 0 V and 6 V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the center of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the center of the waveguide. Finally, we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.
Text
fphy-02-00077
- Version of Record
More information
e-pub ahead of print date: 16 December 2014
Keywords:
52 Gb/s, Carrier depletion, Electro-optic modulator, Mach-Zehnder, Silicon photonics
Identifiers
Local EPrints ID: 481296
URI: http://eprints.soton.ac.uk/id/eprint/481296
ISSN: 0429-7725
PURE UUID: 43b15b80-7e88-4ef4-b123-9c6ae4530c05
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Date deposited: 22 Aug 2023 16:47
Last modified: 18 Mar 2024 03:19
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Contributors
Author:
Youfang Hu
Author:
Jean Marc Fedeli
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