Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration
We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components.
InAs, Photonic integration, Quantum dot, Silicon nitride, Surface passivation
Hou, Yaonan
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Skandalos, Ilias
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Tang, Mingchu
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Jia, Hui
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Deng, Huiwen
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Yu, Xuezhe
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Noori, Yasir
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Stathopoulos, Spyros
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Chen, Siming
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Liu, Huiyun
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Seeds, Alwyn
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Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic
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June 2023
Hou, Yaonan
21cd6d93-63f2-4c1d-8297-6cce6bc7a772
Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Tang, Mingchu
a9b38203-265f-458f-9205-9a94deffa997
Jia, Hui
457a418b-49f9-4902-9bed-1cb83e61848b
Deng, Huiwen
18e10f39-5251-4ed6-93fb-a6a53be54400
Yu, Xuezhe
2782a106-ea43-41db-8abf-91b1d879541a
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Chen, Siming
3677dc82-9c6c-4711-a326-8c301485c865
Liu, Huiyun
ed01636f-0728-4d76-87ee-08b93635b2aa
Seeds, Alwyn
b2a19d24-64a5-4572-8992-b211a240a185
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hou, Yaonan, Skandalos, Ilias, Tang, Mingchu, Jia, Hui, Deng, Huiwen, Yu, Xuezhe, Noori, Yasir, Stathopoulos, Spyros, Chen, Siming, Liu, Huiyun, Seeds, Alwyn, Reed, Graham and Gardes, Frederic
(2023)
Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration.
Journal of Luminescence, 258, [119799].
(doi:10.1016/j.jlumin.2023.119799).
Abstract
We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components.
Text
1-s2.0-S0022231323001321-main
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More information
Accepted/In Press date: 8 March 2023
e-pub ahead of print date: 15 March 2023
Published date: June 2023
Additional Information:
Funding Information:
The authors are grateful for support from the UKRI-EPSRC Programme Grant “QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS)” under the grant number of EP/T028475/1 .
For the purpose of open access, the author has applied a Creative Commons Attribution* (CCBY) licence to any Author Accepted Manuscript version arising.
Keywords:
InAs, Photonic integration, Quantum dot, Silicon nitride, Surface passivation
Identifiers
Local EPrints ID: 481506
URI: http://eprints.soton.ac.uk/id/eprint/481506
ISSN: 0022-2313
PURE UUID: 1b341227-19b4-4560-9198-47282af778be
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Date deposited: 30 Aug 2023 16:47
Last modified: 10 Oct 2024 02:05
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Contributors
Author:
Yaonan Hou
Author:
Ilias Skandalos
Author:
Mingchu Tang
Author:
Hui Jia
Author:
Huiwen Deng
Author:
Xuezhe Yu
Author:
Yasir Noori
Author:
Spyros Stathopoulos
Author:
Siming Chen
Author:
Huiyun Liu
Author:
Alwyn Seeds
Author:
Graham Reed
Author:
Frederic Gardes
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