Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications
Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications
The integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme. Nevertheless, to obtain operation for a wider range of wavelengths (O to C band) a thick stack of Ge/GeSi layers forming quantum wells is required, leading to a dramatic increase in the complexity linked to sub-micron waveguide coupling. In this work, we present a proof-of-concept integration between micro-metric waveguides, through the butt-coupling of a 1.25μm thick N-rich silicon nitride (SiN) waveguide with a 1.25μm thick silicon waveguide for O-band operation. A numerical analysis is conducted for the design of the waveguide-to-waveguide interface, with the aim to minimize the power coupling loss and back-reflection levels. The theoretical results are compared to the measured data, demonstrating a coupling loss level of 0.5dB for TE and TM polarisation. Based on the SiN-SOI interconnection simulation strategy, the simulation results of a quantum-confined Stark effect (QCSE) stack waveguide coupled to a SiN waveguide are then presented.
Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Rutirawut, Teerapat
f7a8063d-402d-4ff0-aa01-6af5d1fd4a6d
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
19 October 2022
Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Rutirawut, Teerapat
f7a8063d-402d-4ff0-aa01-6af5d1fd4a6d
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Skandalos, Ilias, Domínguez Bucio, Thalía, Mastronardi, Lorenzo, Rutirawut, Teerapat and Gardes, Frederic Y.
(2022)
Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications.
Scientific Reports, 12 (1), [17453].
(doi:10.1038/s41598-022-22456-x).
Abstract
The integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme. Nevertheless, to obtain operation for a wider range of wavelengths (O to C band) a thick stack of Ge/GeSi layers forming quantum wells is required, leading to a dramatic increase in the complexity linked to sub-micron waveguide coupling. In this work, we present a proof-of-concept integration between micro-metric waveguides, through the butt-coupling of a 1.25μm thick N-rich silicon nitride (SiN) waveguide with a 1.25μm thick silicon waveguide for O-band operation. A numerical analysis is conducted for the design of the waveguide-to-waveguide interface, with the aim to minimize the power coupling loss and back-reflection levels. The theoretical results are compared to the measured data, demonstrating a coupling loss level of 0.5dB for TE and TM polarisation. Based on the SiN-SOI interconnection simulation strategy, the simulation results of a quantum-confined Stark effect (QCSE) stack waveguide coupled to a SiN waveguide are then presented.
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s41598-022-22456-x
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Published date: 19 October 2022
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Funding Information:
This work was supported by the Engineering and Physical Sciences Research Council (EPSRC) with the grant “Rockley Photonics and the University of Southampton: A Prosperity Partnership” (EP/R003076/1) and the project “Plasmoniac” H2020 program under grant agreement . I. S. would like to thank the Optoelectronics Research Centre (ORC) and the “Eleftheria Barka” administration for their support to pursue postgraduate studies. The fabrication was carried out at the Southampton Nanofabrication Centre part of the Zepler Institute, at the University of Southampton, UK.
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Local EPrints ID: 481732
URI: http://eprints.soton.ac.uk/id/eprint/481732
ISSN: 2045-2322
PURE UUID: d796c41f-2cbf-4e3b-b8e7-e8e07149c8ee
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Date deposited: 06 Sep 2023 16:53
Last modified: 10 Oct 2024 02:05
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