40 Gb/s high speed silicon modulator for TE and TM polarisation
40 Gb/s high speed silicon modulator for TE and TM polarisation
The workhorse of future high speed short reach interconnect technology will be the optical modulator. These devices in silicon have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Hence, the need for devices with compact real estate, broadband characteristics, operating at high speed and working for both polarisation is of outmost importance. Here we describe the approach taken at Surrey to meet these requirements from the early days to the more recent work where some initial data are introduced. The recent all-silicon optical modulator uses a CMOS compatible fabrication and demonstrates high data rate with large extinction ratio for TE and TM polarisations. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to facilitate a high yield, reliable fabrication process.
Carrier depletion, Integrated optics, Microphotonics, Optical modulator, Silicon-on-insulator, Waveguide
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
17 January 2011
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, F.Y., Thomson, D.J. and Reed, G.T.
(2011)
40 Gb/s high speed silicon modulator for TE and TM polarisation.
Kubby, Joel A. and Reed, Graham T.
(eds.)
In Silicon Photonics VI.
vol. 7943,
SPIE.
8 pp
.
(doi:10.1117/12.874715).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The workhorse of future high speed short reach interconnect technology will be the optical modulator. These devices in silicon have experienced dramatic improvements over the last 6 years and the modulation bandwidth has increased from a few tens of MHz to over 30 GHz. However, the demands of optical interconnects are significant. Hence, the need for devices with compact real estate, broadband characteristics, operating at high speed and working for both polarisation is of outmost importance. Here we describe the approach taken at Surrey to meet these requirements from the early days to the more recent work where some initial data are introduced. The recent all-silicon optical modulator uses a CMOS compatible fabrication and demonstrates high data rate with large extinction ratio for TE and TM polarisations. This technology is not only compatible with conventional complementary MOS (CMOS) processing, but is also intended to facilitate a high yield, reliable fabrication process.
Text
794319
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Available under License Other.
More information
Published date: 17 January 2011
Venue - Dates:
Silicon Photonics VI, , San Francisco, CA, United States, 2011-01-22 - 2011-01-27
Keywords:
Carrier depletion, Integrated optics, Microphotonics, Optical modulator, Silicon-on-insulator, Waveguide
Identifiers
Local EPrints ID: 481746
URI: http://eprints.soton.ac.uk/id/eprint/481746
ISSN: 0277-786X
PURE UUID: 7b2ef452-0df9-4d18-a3fb-21e23ff47ffd
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Date deposited: 07 Sep 2023 16:34
Last modified: 18 Mar 2024 03:19
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Contributors
Editor:
Joel A. Kubby
Editor:
Graham T. Reed
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