Carrier depletion based silicon optical modulators
Carrier depletion based silicon optical modulators
Silicon optical modulators have generated an increasing interest in the recent years, as their performances are crucial to achieve high speed optical links. Among possibilities to achieve optical modulation in silicon-based materials, index variation by free carrier concentration variation has demonstrated good potentiality. High speed and low loss silicon modulators can be obtained by carrier depletion inside lateral PN or PIPIN diodes. When the diode is reverse biased, refractive index variations are obtained and then phase modulation of the guided wave is obtained. Mach-Zehnder interferometers are used to convert phase modulation into intensity modulation. Experimental results are presented for both PN and PIPIN diodes.
Carrier depletion, Integrated devices, Optical modulation, rib waveguide, Silicon modulator, Silicon On Insulator (SOI), Silicon photonics
Marris-Morini, Delphine
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Rasigade, Gilles
ac449eb4-f161-4bc2-98bb-c64406f01edc
Vivien, Laurent
59537381-cb28-458b-9bca-2f76ce99b57a
Thomson, David J.
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Gardes, Frédéric Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Fédéli, Jean Marc
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Crozat, Paul
bbe6f543-b9e5-489f-95b3-c270358c71dd
Cassan, Eric
7214d094-d439-4a3c-a4f3-5d52653df6c7
Righini, Giancarlo Cesare
13 May 2010
Marris-Morini, Delphine
62ff7145-f532-4383-9eb2-6f8cb3acd551
Rasigade, Gilles
ac449eb4-f161-4bc2-98bb-c64406f01edc
Vivien, Laurent
59537381-cb28-458b-9bca-2f76ce99b57a
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, Frédéric Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Fédéli, Jean Marc
3ba0b3fe-2d35-4bf7-9b6b-3d877e1f031b
Crozat, Paul
bbe6f543-b9e5-489f-95b3-c270358c71dd
Cassan, Eric
7214d094-d439-4a3c-a4f3-5d52653df6c7
Righini, Giancarlo Cesare
Marris-Morini, Delphine, Rasigade, Gilles, Vivien, Laurent, Thomson, David J., Gardes, Frédéric Y., Reed, Graham T., Fédéli, Jean Marc, Crozat, Paul and Cassan, Eric
(2010)
Carrier depletion based silicon optical modulators.
Righini, Giancarlo Cesare
(ed.)
In Silicon Photonics and Photonic Integrated Circuits II.
vol. 7719,
SPIE.
8 pp
.
(doi:10.1117/12.855255).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Silicon optical modulators have generated an increasing interest in the recent years, as their performances are crucial to achieve high speed optical links. Among possibilities to achieve optical modulation in silicon-based materials, index variation by free carrier concentration variation has demonstrated good potentiality. High speed and low loss silicon modulators can be obtained by carrier depletion inside lateral PN or PIPIN diodes. When the diode is reverse biased, refractive index variations are obtained and then phase modulation of the guided wave is obtained. Mach-Zehnder interferometers are used to convert phase modulation into intensity modulation. Experimental results are presented for both PN and PIPIN diodes.
Text
771903
- Version of Record
Available under License Other.
More information
Published date: 13 May 2010
Venue - Dates:
Silicon Photonics and Photonic Integrated Circuits II, , Brussels, Belgium, 2010-04-12 - 2010-04-16
Keywords:
Carrier depletion, Integrated devices, Optical modulation, rib waveguide, Silicon modulator, Silicon On Insulator (SOI), Silicon photonics
Identifiers
Local EPrints ID: 481783
URI: http://eprints.soton.ac.uk/id/eprint/481783
ISSN: 0277-786X
PURE UUID: c3a85fc7-9471-4b17-b3a0-849299d92f7a
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Date deposited: 07 Sep 2023 16:38
Last modified: 18 Mar 2024 03:19
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Contributors
Author:
Delphine Marris-Morini
Author:
Gilles Rasigade
Author:
Laurent Vivien
Author:
Jean Marc Fédéli
Author:
Paul Crozat
Author:
Eric Cassan
Editor:
Giancarlo Cesare Righini
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