Total internal reflection optical switch in SOI with defect engineered barrier region
Total internal reflection optical switch in SOI with defect engineered barrier region
Total internal reflection optical switches offer a switching operation which can be wavelength insensitive, thermally stable and polarisation independent. The implementation of such a switch based upon carrier injection in silicon is difficult due to the long diffusion lengths of injected free carriers. In this paper experimental results are presented which show that a reflective type switching operation is obtainable if a barrier formed of defective silicon is used to reduce free carrier diffusion.
Carrier confinement, Defect engineering, Optical switch, Silicon photonics, Total internal reflection
2483-2491
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Knights, Andy P.
74a2ce08-8428-4835-86c5-5673079b0dd1
Yang, Pengyuan Y.
6d9dd042-c09f-4319-8a86-aa57d5fe8c63
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Smith, Andy J.
66374a86-02e5-4764-a612-7bc125808155
Litvinenko, Konstantin L.
b67c6dfa-1f93-4ee0-a053-19b2a5638b31
28 June 2010
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Knights, Andy P.
74a2ce08-8428-4835-86c5-5673079b0dd1
Yang, Pengyuan Y.
6d9dd042-c09f-4319-8a86-aa57d5fe8c63
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Smith, Andy J.
66374a86-02e5-4764-a612-7bc125808155
Litvinenko, Konstantin L.
b67c6dfa-1f93-4ee0-a053-19b2a5638b31
Thomson, David J., Reed, Graham T., Knights, Andy P., Yang, Pengyuan Y., Gardes, Frederic Y., Smith, Andy J. and Litvinenko, Konstantin L.
(2010)
Total internal reflection optical switch in SOI with defect engineered barrier region.
Journal of Lightwave Technology, 28 (17), , [5497058].
(doi:10.1109/JLT.2010.2053914).
Abstract
Total internal reflection optical switches offer a switching operation which can be wavelength insensitive, thermally stable and polarisation independent. The implementation of such a switch based upon carrier injection in silicon is difficult due to the long diffusion lengths of injected free carriers. In this paper experimental results are presented which show that a reflective type switching operation is obtainable if a barrier formed of defective silicon is used to reduce free carrier diffusion.
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Published date: 28 June 2010
Additional Information:
Funding Information: This work was supported by the EPSRC. D. J. Thomson, G. T. Reed, P. Y. Yang, F. Y. Gardes, A. J. Smith and K. L. Litvinenko are with the Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, U.K. (e-mail: d.thomson@surrey.ac.uk). A. P. Knights is with the Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada.
Keywords:
Carrier confinement, Defect engineering, Optical switch, Silicon photonics, Total internal reflection
Identifiers
Local EPrints ID: 481863
URI: http://eprints.soton.ac.uk/id/eprint/481863
ISSN: 0733-8724
PURE UUID: 6ede9d2f-db69-41a3-b8fd-20a7644985e9
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Date deposited: 11 Sep 2023 17:15
Last modified: 18 Mar 2024 03:19
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Contributors
Author:
David J. Thomson
Author:
Graham T. Reed
Author:
Andy P. Knights
Author:
Pengyuan Y. Yang
Author:
Frederic Y. Gardes
Author:
Andy J. Smith
Author:
Konstantin L. Litvinenko
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