Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices
Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices
Silicon nitride films with different compositions are exposed to ultraviolet light using both an LED and a laser as light sources (with a wavelength of 244 nm and 265 nm, respectively). Collected data suggests a decrease in refractive index following the exposure, and this can be used for permanently tuning the response of passive photonic devices. The effects of ultraviolet illumination on the material are studied combining observations of the change in the response of the photonic devices and analysis of exposed films.
post-fabrication trimming, Silicon Nitride, Silicon Photonics, ultraviolet light
De Paoli, Greta
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Flint, Alexander Iain
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Domínguez Bucio, Thalía
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Reed, Graham
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Gates, James
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Gardes, Frederic
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13 March 2023
De Paoli, Greta
eafc5c8a-e30a-40d1-a57e-0beb7f85af72
Flint, Alexander Iain
2314a288-92bc-44ca-9627-350eac1a7e26
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Gates, James
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
De Paoli, Greta, Flint, Alexander Iain, Domínguez Bucio, Thalía, Reed, Graham, Gates, James and Gardes, Frederic
(2023)
Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices.
Reed, Graham T. and Knights, Andrew P.
(eds.)
In Silicon Photonics XVIII.
vol. 12426,
SPIE.
5 pp
.
(doi:10.1117/12.2647364).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Silicon nitride films with different compositions are exposed to ultraviolet light using both an LED and a laser as light sources (with a wavelength of 244 nm and 265 nm, respectively). Collected data suggests a decrease in refractive index following the exposure, and this can be used for permanently tuning the response of passive photonic devices. The effects of ultraviolet illumination on the material are studied combining observations of the change in the response of the photonic devices and analysis of exposed films.
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Published date: 13 March 2023
Additional Information:
Funding Information:
The authors acknowledge the support of the Engineering and Physical Sciences Research Council (EPSRC) with the grant: EP/R003076/1 “Rockley Photonics and the University of Southampton: A Prosperity Partnership”.
Publisher Copyright:
© 2023 SPIE.
Venue - Dates:
SPIE Photonics West 2023, The Moscone Center, San Francisco, United States, 2023-01-28 - 2023-02-02
Keywords:
post-fabrication trimming, Silicon Nitride, Silicon Photonics, ultraviolet light
Identifiers
Local EPrints ID: 482018
URI: http://eprints.soton.ac.uk/id/eprint/482018
ISSN: 0277-786X
PURE UUID: d38791a2-7ed5-4c99-84bb-8784d2f970d9
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Date deposited: 15 Sep 2023 16:33
Last modified: 18 Mar 2024 04:00
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Contributors
Author:
Greta De Paoli
Editor:
Graham T. Reed
Editor:
Andrew P. Knights
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