Fabrication and characterisation of resistive nanocrystalline graphite
Fabrication and characterisation of resistive nanocrystalline graphite
This work demonstrates the feasibility of fabricating resistive nanocrystalline graphite (NCG) on a Si substrate. The NCG film thickness of 9 nm was deposited using metal-free plasma enhanced chemical vapour deposition (PECVD) on a 6-inch p-type silicon wafer. The surface and electrical properties of the resistors produced were investigated. The average grain size of the NCG thin film is 35 nm with 0.8 nm of surface roughness. The electrical characterization of the NCG strips show metal-like behaviour in which the resistance is proportional to the strip lengths. The sheet resistance is found to be 39 kohm/sq which is two orders of magnitude larger than graphene deposited using Chemical Vapour Deposition. This indicates the carrier transport across grain boundaries has a large influence on the overall resistance of the device. However, the nano-sized grains on the NCG material could be used to enhance the sensitivity of the material towards the environment.
nanocrystalline graphite, resistor, plasma enhanced chemical vapor deposition, grain boundaries
Sultan, S.M.
c5e0a5a3-5ac9-4b9d-bdb3-3af94ce82c89
Pu, S.H.
d77966a2-bc11-4781-8948-686bf12a7316
Fishlock, Sam Jeffery
b35c425e-91f5-40a1-b3a7-d2939463fb19
Chong, H. M. H.
950ac005-dbff-4702-b9dd-0ff5edd2c12d
Lee, Hing Wah
9d0f3634-dd4d-411c-aee0-6bd16b5471d5
McBride, John
d9429c29-9361-4747-9ba3-376297cb8770
31 July 2021
Sultan, S.M.
c5e0a5a3-5ac9-4b9d-bdb3-3af94ce82c89
Pu, S.H.
d77966a2-bc11-4781-8948-686bf12a7316
Fishlock, Sam Jeffery
b35c425e-91f5-40a1-b3a7-d2939463fb19
Chong, H. M. H.
950ac005-dbff-4702-b9dd-0ff5edd2c12d
Lee, Hing Wah
9d0f3634-dd4d-411c-aee0-6bd16b5471d5
McBride, John
d9429c29-9361-4747-9ba3-376297cb8770
Sultan, S.M., Pu, S.H., Fishlock, Sam Jeffery, Chong, H. M. H., Lee, Hing Wah and McBride, John
(2021)
Fabrication and characterisation of resistive nanocrystalline graphite.
In IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
3 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
This work demonstrates the feasibility of fabricating resistive nanocrystalline graphite (NCG) on a Si substrate. The NCG film thickness of 9 nm was deposited using metal-free plasma enhanced chemical vapour deposition (PECVD) on a 6-inch p-type silicon wafer. The surface and electrical properties of the resistors produced were investigated. The average grain size of the NCG thin film is 35 nm with 0.8 nm of surface roughness. The electrical characterization of the NCG strips show metal-like behaviour in which the resistance is proportional to the strip lengths. The sheet resistance is found to be 39 kohm/sq which is two orders of magnitude larger than graphene deposited using Chemical Vapour Deposition. This indicates the carrier transport across grain boundaries has a large influence on the overall resistance of the device. However, the nano-sized grains on the NCG material could be used to enhance the sensitivity of the material towards the environment.
Text
6. IEEE conf Malaysia Sultan
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More information
Published date: 31 July 2021
Venue - Dates:
2021 IEEE Regional Symposium on Micro and Nanoelectronics <br/>, 2021-08-02 - 2021-08-04
Keywords:
nanocrystalline graphite, resistor, plasma enhanced chemical vapor deposition, grain boundaries
Identifiers
Local EPrints ID: 482239
URI: http://eprints.soton.ac.uk/id/eprint/482239
PURE UUID: 92a9b281-c7cf-4b43-8072-1741626e7754
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Date deposited: 21 Sep 2023 16:59
Last modified: 17 Mar 2024 02:35
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Contributors
Author:
S.M. Sultan
Author:
S.H. Pu
Author:
Sam Jeffery Fishlock
Author:
H. M. H. Chong
Author:
Hing Wah Lee
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