Polymer/TiO2 nanorod nanocomposite optical memristor device
Polymer/TiO2 nanorod nanocomposite optical memristor device
Modulation of resistive switching memory by light opens the route to new optoelectronic devices that can be controlled both optically and electronically. Applications include integrated circuits with memory elements switchable by light and neuromorphic computing with optically reconfigurable and tunable synaptic circuits. We report on a unique nanocomposite resistive switching material and device made from a low concentration (∼0.1% by mass) of titanium dioxide nanorods (TiO2-NRs) embedded within the azobenzene polymer, poly(disperse red 1 acrylate, PDR1A). The device exhibits both reversible electronic memristor switching and reversible polarization-dependent optical switching. Optical irradiation by circularly polarized light causes a trans–cis photochemical isomerization that modifies the conformation and orientation of the photoactive azo-unit within the polymer. The resulting expansion of the composite (PDR1A/TiO2-NR) polymer film modifies the conduction pathway, facilitated by the presence of the TiO2-NRs, as a semiconductor material, through the (PDR1A/TiO2-NR) polymer film, which provides a sensitive means to control resistive switching in the device. The effect is reversible by changing the polarization state of the incident light. A charge-flux memristor model successfully reproduces the current–voltage hysteresis loops and threshold switching properties of the device, as well as the effect of the illumination on the electrical characteristics.
optical memristor, nanorod, titanium dioxide, PDR1A, resistive switching, RRAM, charge-flux model
14965-14973
Hamdiyah, A.H. Jaafar
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Chawa, M. M. Al
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Cheng, F.
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Kelly, S.M.
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Picos, R.
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Tetzlaff, R.
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Kemp, N.T.
eaa5c6b4-5044-4b23-82ef-7539c83b8dc1
15 July 2021
Hamdiyah, A.H. Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Chawa, M. M. Al
8a897799-f996-4c62-8548-a105d9652b88
Cheng, F.
5efb5dbd-d284-4e80-a3f7-5cffb3ff24fb
Kelly, S.M.
1399283b-221b-4dfb-8f6c-219934cced9f
Picos, R.
4126a007-9e83-42b5-8ec8-4249612a1f9c
Tetzlaff, R.
8175a5c9-ecd7-4d03-909c-dd45b38ee6c5
Kemp, N.T.
eaa5c6b4-5044-4b23-82ef-7539c83b8dc1
Hamdiyah, A.H. Jaafar, Chawa, M. M. Al, Cheng, F., Kelly, S.M., Picos, R., Tetzlaff, R. and Kemp, N.T.
(2021)
Polymer/TiO2 nanorod nanocomposite optical memristor device.
The Journal of Physical Chemistry C, 125 (27), .
(doi:10.1021/acs.jpcc.1c02799).
Abstract
Modulation of resistive switching memory by light opens the route to new optoelectronic devices that can be controlled both optically and electronically. Applications include integrated circuits with memory elements switchable by light and neuromorphic computing with optically reconfigurable and tunable synaptic circuits. We report on a unique nanocomposite resistive switching material and device made from a low concentration (∼0.1% by mass) of titanium dioxide nanorods (TiO2-NRs) embedded within the azobenzene polymer, poly(disperse red 1 acrylate, PDR1A). The device exhibits both reversible electronic memristor switching and reversible polarization-dependent optical switching. Optical irradiation by circularly polarized light causes a trans–cis photochemical isomerization that modifies the conformation and orientation of the photoactive azo-unit within the polymer. The resulting expansion of the composite (PDR1A/TiO2-NR) polymer film modifies the conduction pathway, facilitated by the presence of the TiO2-NRs, as a semiconductor material, through the (PDR1A/TiO2-NR) polymer film, which provides a sensitive means to control resistive switching in the device. The effect is reversible by changing the polarization state of the incident light. A charge-flux memristor model successfully reproduces the current–voltage hysteresis loops and threshold switching properties of the device, as well as the effect of the illumination on the electrical characteristics.
Text
Polymer/TiO2 Nanorod Nanocomposite Optical Memristor Device
- Accepted Manuscript
More information
e-pub ahead of print date: 30 June 2021
Published date: 15 July 2021
Additional Information:
Funding Information:
We would like to sincerely thank the Iraqi Ministry of Higher Education and Scientific Research (University of Baghdad) for supporting and part funding of this work. This work has been supported partially by the German Research Foundation (DFG) under Project “SNIFFBOT 100369691”.
Publisher Copyright:
© 2021 American Chemical Society.
Keywords:
optical memristor, nanorod, titanium dioxide, PDR1A, resistive switching, RRAM, charge-flux model
Identifiers
Local EPrints ID: 482969
URI: http://eprints.soton.ac.uk/id/eprint/482969
ISSN: 1932-7447
PURE UUID: 2cc0618f-f224-40d2-b750-9d63a6fb730e
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Date deposited: 17 Oct 2023 17:02
Last modified: 05 Jun 2024 17:45
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Contributors
Author:
A.H. Jaafar Hamdiyah
Author:
M. M. Al Chawa
Author:
F. Cheng
Author:
S.M. Kelly
Author:
R. Picos
Author:
R. Tetzlaff
Author:
N.T. Kemp
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