Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI3 perovskite. Remarkably, when B-γ-CsSnI3 perovskite is deposited from a dimethylformamide solution onto a 180–190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI3 perovskite photovoltaics processed from solution.
Wijesekara, Anjana
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Varagnolo, Silvia
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Dabera, G. Dinesha M.R.
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Marshall, Kenneth P.
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Pereira, H. Jessica
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Hatton, Ross A.
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Wijesekara, Anjana
a98ab77b-3e7a-468e-9754-c136de33f84c
Varagnolo, Silvia
11ea551b-35cb-4ac4-bdf4-ee9b272c4be7
Dabera, G. Dinesha M.R.
df1fb221-8144-4617-a733-cc6784c527db
Marshall, Kenneth P.
bc960322-a7a2-4691-a56e-44a3bcb0c6ea
Pereira, H. Jessica
99b16ebd-fa9f-41f0-a4fe-f0c0e22f6697
Hatton, Ross A.
839a49b5-1557-4256-b276-ae4be030f7d1
Wijesekara, Anjana, Varagnolo, Silvia, Dabera, G. Dinesha M.R., Marshall, Kenneth P., Pereira, H. Jessica and Hatton, Ross A.
(2018)
Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics.
Scientific Reports, 8, [15722].
(doi:10.1038/s41598-018-33987-7).
Abstract
We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI3 perovskite. Remarkably, when B-γ-CsSnI3 perovskite is deposited from a dimethylformamide solution onto a 180–190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI3 perovskite photovoltaics processed from solution.
Text
s41598-018-33987-7
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Accepted/In Press date: 7 October 0208
e-pub ahead of print date: 24 October 2018
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Local EPrints ID: 483223
URI: http://eprints.soton.ac.uk/id/eprint/483223
ISSN: 2045-2322
PURE UUID: acaeac88-8f95-43e1-ba2f-8449325ad0c6
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Date deposited: 26 Oct 2023 16:46
Last modified: 18 Mar 2024 04:14
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Author:
Anjana Wijesekara
Author:
Silvia Varagnolo
Author:
G. Dinesha M.R. Dabera
Author:
Kenneth P. Marshall
Author:
H. Jessica Pereira
Author:
Ross A. Hatton
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