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Probing the compound effect of spatially varying intrinsic defects and doping on mechanical properties of hybrid graphene monolayers

Probing the compound effect of spatially varying intrinsic defects and doping on mechanical properties of hybrid graphene monolayers
Probing the compound effect of spatially varying intrinsic defects and doping on mechanical properties of hybrid graphene monolayers

Doping in pristine 2D materials brings about the advantage of modulating wide range of mechanical properties simultaneously. However, intrinsic defects (such as Stone-Wales and nanopore) in such hybrid materials are inevitable due to complex manufacturing and synthesis processes. Besides that, defects and irregularities can be intentionally induced in a pristine nanostructure for multi-synchronous modulation of various multi-functional properties. Whatever the case may be, in order to realistically analyse a doped graphene sheet, it is of utmost importance to investigate the compound effect of doping and defects in such 2D monolayers. Here we present a molecular dynamics based investigation for probing mechanical properties (such as Young's modulus, post-elastic behaviour, failure strength and strain) of doped graphene (C14 and Si) coupling the effect of inevitable defects. Spatial sensitivity of defect and doping are systematically analyzed considering different rational instances. The study reveals the effects of individual defects and doping along with their possible compounded influences on the failure stress, failure strain, Young's modulus and constitutive relations beyond the elastic regime. Such detailed mechanical characterization under the practically relevant compound effects would allow us to access the viability of adopting doped graphene in various multifunctional nanoelectromechanical devices and systems in a realistic situation.

Defect in graphene, Defected 2D material, Doped graphene, Spatial sensitivity of defect and doping, Temperature-dependent mechanical properties
1005-0302
44-58
Kumar Gupta, Kritesh
98d9a85a-c13a-4884-97e7-4ebe34309d8a
Mukhopadhyay, Tanmoy
2ae18ab0-7477-40ac-ae22-76face7be475
Roy, Aditya
3f706694-506a-4c48-a2d5-8e371c297f89
Dey, Sudip
ad19fb29-0675-43ef-85a6-69aedc394525
Kumar Gupta, Kritesh
98d9a85a-c13a-4884-97e7-4ebe34309d8a
Mukhopadhyay, Tanmoy
2ae18ab0-7477-40ac-ae22-76face7be475
Roy, Aditya
3f706694-506a-4c48-a2d5-8e371c297f89
Dey, Sudip
ad19fb29-0675-43ef-85a6-69aedc394525

Kumar Gupta, Kritesh, Mukhopadhyay, Tanmoy, Roy, Aditya and Dey, Sudip (2020) Probing the compound effect of spatially varying intrinsic defects and doping on mechanical properties of hybrid graphene monolayers. Journal of Materials Science and Technology, 50, 44-58. (doi:10.1016/j.jmst.2020.03.004).

Record type: Article

Abstract

Doping in pristine 2D materials brings about the advantage of modulating wide range of mechanical properties simultaneously. However, intrinsic defects (such as Stone-Wales and nanopore) in such hybrid materials are inevitable due to complex manufacturing and synthesis processes. Besides that, defects and irregularities can be intentionally induced in a pristine nanostructure for multi-synchronous modulation of various multi-functional properties. Whatever the case may be, in order to realistically analyse a doped graphene sheet, it is of utmost importance to investigate the compound effect of doping and defects in such 2D monolayers. Here we present a molecular dynamics based investigation for probing mechanical properties (such as Young's modulus, post-elastic behaviour, failure strength and strain) of doped graphene (C14 and Si) coupling the effect of inevitable defects. Spatial sensitivity of defect and doping are systematically analyzed considering different rational instances. The study reveals the effects of individual defects and doping along with their possible compounded influences on the failure stress, failure strain, Young's modulus and constitutive relations beyond the elastic regime. Such detailed mechanical characterization under the practically relevant compound effects would allow us to access the viability of adopting doped graphene in various multifunctional nanoelectromechanical devices and systems in a realistic situation.

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More information

Published date: 1 August 2020
Additional Information: Funding Information: KKG would like to acknowledge the financial support received from Ministry of Human Resource and Development (MHRD), Govt. of India during the period of this research work. TM acknowledges the enhanced financial support from IIT Kanpur during this research. Publisher Copyright: © 2020
Keywords: Defect in graphene, Defected 2D material, Doped graphene, Spatial sensitivity of defect and doping, Temperature-dependent mechanical properties

Identifiers

Local EPrints ID: 483568
URI: http://eprints.soton.ac.uk/id/eprint/483568
ISSN: 1005-0302
PURE UUID: f26b414e-5f92-4c70-af57-c55379ff1211

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Date deposited: 01 Nov 2023 18:01
Last modified: 18 Mar 2024 04:10

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Contributors

Author: Kritesh Kumar Gupta
Author: Tanmoy Mukhopadhyay
Author: Aditya Roy
Author: Sudip Dey

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