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Effects of surface passivation on top-down ZnO nanowire transistors

Effects of surface passivation on top-down ZnO nanowire transistors
Effects of surface passivation on top-down ZnO nanowire transistors
We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/Vs. Passivated ZnO NWFETs demonstrate threshold voltage shift to −10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/Vs. The passivated device results indicate suitability for biosensing applications.
0167-9317
91-95
Ditshego, N.M.J.
12e0ccd8-8b73-47bd-a896-07d0268fb769
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ditshego, N.M.J.
12e0ccd8-8b73-47bd-a896-07d0268fb769
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Ditshego, N.M.J., Sun, K., Zeimpekis, I., Ashburn, P., de Planque, M.R.R. and Chong, H.M.H. (2015) Effects of surface passivation on top-down ZnO nanowire transistors. Microelectronic Engineering, 145, 91-95. (doi:10.1016/j.mee.2015.03.013).

Record type: Article

Abstract

We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/Vs. Passivated ZnO NWFETs demonstrate threshold voltage shift to −10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/Vs. The passivated device results indicate suitability for biosensing applications.

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More information

Accepted/In Press date: 10 March 2015
e-pub ahead of print date: 20 March 2015
Learn more about Institute for Life Sciences research Learn more about Sustainable Electronic Technologies research

Identifiers

Local EPrints ID: 484314
URI: http://eprints.soton.ac.uk/id/eprint/484314
DOI: doi:10.1016/j.mee.2015.03.013
ISSN: 0167-9317
PURE UUID: 0ee07826-9fe5-4ca7-b1a9-3cb13f8ed0e9
ORCID for K. Sun: ORCID iD orcid.org/0000-0001-6807-6253
ORCID for I. Zeimpekis: ORCID iD orcid.org/0000-0002-7455-1599
ORCID for M.R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 15 Nov 2023 17:56
Last modified: 21 Sep 2024 01:46

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Contributors

Author: N.M.J. Ditshego
Author: K. Sun ORCID iD
Author: I. Zeimpekis ORCID iD
Author: P. Ashburn
Author: M.R.R. de Planque ORCID iD
Author: H.M.H. Chong ORCID iD

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