Cohesive zone model for direct silicon wafer bonding

Kubair, D.V. and Spearing, S.M. (2007) Cohesive zone model for direct silicon wafer bonding Journal of Physics D: Applied Physics, 40, (10), pp. 3070-3076. (doi:10.1088/0022-3727/40/10/010).


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Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1088/0022-3727/40/10/010
ISSNs: 0022-3727 (print)

Organisations: Engineering Mats & Surface Engineerg Gp
ePrint ID: 48539
Date :
Date Event
Date Deposited: 27 Sep 2007
Last Modified: 16 Apr 2017 18:23
Further Information:Google Scholar

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