Cohesive zone model for direct silicon wafer bonding
Cohesive zone model for direct silicon wafer bonding
Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.
3070-3076
Kubair, D.V.
18b0b78b-fa15-46c4-823b-12bc2cb3fb90
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
2007
Kubair, D.V.
18b0b78b-fa15-46c4-823b-12bc2cb3fb90
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Kubair, D.V. and Spearing, S.M.
(2007)
Cohesive zone model for direct silicon wafer bonding.
Journal of Physics D: Applied Physics, 40 (10), .
(doi:10.1088/0022-3727/40/10/010).
Abstract
Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.
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Published date: 2007
Organisations:
Engineering Mats & Surface Engineerg Gp
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Local EPrints ID: 48539
URI: http://eprints.soton.ac.uk/id/eprint/48539
ISSN: 0022-3727
PURE UUID: 0d75ddce-5624-4110-bba7-b27b1811b49e
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Date deposited: 27 Sep 2007
Last modified: 16 Mar 2024 03:37
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Author:
D.V. Kubair
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