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Cohesive zone model for direct silicon wafer bonding

Kubair, D.V. and Spearing, S.M. (2007) Cohesive zone model for direct silicon wafer bonding Journal of Physics D: Applied Physics, 40, (10), pp. 3070-3076. (doi:10.1088/0022-3727/40/10/010).

Record type: Article


Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

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Published date: 2007
Organisations: Engineering Mats & Surface Engineerg Gp


Local EPrints ID: 48539
ISSN: 0022-3727
PURE UUID: 0d75ddce-5624-4110-bba7-b27b1811b49e

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Date deposited: 27 Sep 2007
Last modified: 17 Jul 2017 14:59

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Author: D.V. Kubair
Author: S.M. Spearing

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