Blister formation in He-H co-implanted InP: a comprehensive atomistic study

Daghbouj, N., Lin, Jiajie, Sen, H.S., Callisti, M., Li, Bingsheng, Karlik, M., Polcar, T., Shen, Zhenghao, Zhou, Min, You, Tiangui and Ou, Xin (2021) Blister formation in He-H co-implanted InP: a comprehensive atomistic study. Applied Surface Science, 552, [149426]. (doi:10.1016/j.apsusc.2021.149426).

Abstract

The blistering efficiency in He-H-ions co-implanted and annealed InP has been found to peak and vanish in a narrow range of ion fluence ratio (Φ_H/Φ_He = 1.5–3.5) with a fixed He fluence of 2 × 10¹⁶ He⁺/cm². The blisters are formed at low fluence (Φ_H/Φ_He = 1.5), peaked in the middle (Φ_H/Φ_He = 2.5), and disappeared at the high fluence ratio (Φ_H/Φ_He = 3.5). To get a fundamental understanding of blister formation in nanoscale, the defect profiles were studied by various experimental techniques combined with FEM and ab-initio simulations. Cross-section TEM images showed that at a low fluence ratio, He and H are stored in microcracks and bubbles whereas, at a high fluence ratio, the ions are trapped only inside bubbles. These atomic processes that occur during and after co-implantation and annealing are presented together with detailed scenarios in an attempt to explain our results. Based on DFT simulations, the de-trapping of He atoms from the small clusters is energetically cheaper compared to the migration of He from the large clusters formed at high fluence. Moreover, at a high fluence ratio, the presence of large clusters inhibits the He diffusion to the small clusters (precursor of blisters) by capturing migrating He atoms.

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Contributors

Author: T. Polcar

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