Tuning of photonic crystal waveguide microcavity by thermooptic effect
Tuning of photonic crystal waveguide microcavity by thermooptic effect
A tunable photonic crystal microcavity with in-filling holes has been experimentally realized by using the thermooptic effect in silicon-on-insulator waveguide at /spl lambda/=1530 nm. The device was fabricated by reactive ion etching through the silicon core layer for high vertical confinement. A thin film heater has been integrated onto the microcavity. A small change in temperature (and consequent change in refractive index) was sufficient to cause an observable resonance shift. A resonance shift of 5 nm was achieved when the heater was switched on to a current of 1.2 mA (with switching power of about 9 mW).
1.2 mA, 1530 nm, Si-SiO/sub 2/, high vertical confinement, in-filling holes, photonic crystal waveguide microcavity tuning, reactive ion etching, refractive index change, resonant shift, silicon core layer silicon-based photonic integrated circuits, silicon-on-insulator waveguide, thermooptic effect, thin film heater
1528-1530
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R.M.
015beea2-c561-4f3e-ab85-6d23b1996c2b
June 2004
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R.M.
015beea2-c561-4f3e-ab85-6d23b1996c2b
Chong, H.M.H. and De La Rue, R.M.
(2004)
Tuning of photonic crystal waveguide microcavity by thermooptic effect.
IEEE Photonics Technology Letters, 16 (6), .
(doi:10.1109/LPT.2004.826781).
Abstract
A tunable photonic crystal microcavity with in-filling holes has been experimentally realized by using the thermooptic effect in silicon-on-insulator waveguide at /spl lambda/=1530 nm. The device was fabricated by reactive ion etching through the silicon core layer for high vertical confinement. A thin film heater has been integrated onto the microcavity. A small change in temperature (and consequent change in refractive index) was sufficient to cause an observable resonance shift. A resonance shift of 5 nm was achieved when the heater was switched on to a current of 1.2 mA (with switching power of about 9 mW).
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More information
Published date: June 2004
Keywords:
1.2 mA, 1530 nm, Si-SiO/sub 2/, high vertical confinement, in-filling holes, photonic crystal waveguide microcavity tuning, reactive ion etching, refractive index change, resonant shift, silicon core layer silicon-based photonic integrated circuits, silicon-on-insulator waveguide, thermooptic effect, thin film heater
Identifiers
Local EPrints ID: 48671
URI: http://eprints.soton.ac.uk/id/eprint/48671
ISSN: 1041-1135
PURE UUID: f1827ef9-83ab-40a7-a75a-9a27da35d67b
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Date deposited: 08 Oct 2007
Last modified: 16 Mar 2024 03:57
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Contributors
Author:
H.M.H. Chong
Author:
R.M. De La Rue
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