The University of Southampton
University of Southampton Institutional Repository

Tuning of photonic crystal waveguide microcavity by thermooptic effect

Tuning of photonic crystal waveguide microcavity by thermooptic effect
Tuning of photonic crystal waveguide microcavity by thermooptic effect
A tunable photonic crystal microcavity with in-filling holes has been experimentally realized by using the thermooptic effect in silicon-on-insulator waveguide at /spl lambda/=1530 nm. The device was fabricated by reactive ion etching through the silicon core layer for high vertical confinement. A thin film heater has been integrated onto the microcavity. A small change in temperature (and consequent change in refractive index) was sufficient to cause an observable resonance shift. A resonance shift of 5 nm was achieved when the heater was switched on to a current of 1.2 mA (with switching power of about 9 mW).
1.2 mA, 1530 nm, Si-SiO/sub 2/, high vertical confinement, in-filling holes, photonic crystal waveguide microcavity tuning, reactive ion etching, refractive index change, resonant shift, silicon core layer silicon-based photonic integrated circuits, silicon-on-insulator waveguide, thermooptic effect, thin film heater
1041-1135
1528-1530
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R.M.
015beea2-c561-4f3e-ab85-6d23b1996c2b
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
De La Rue, R.M.
015beea2-c561-4f3e-ab85-6d23b1996c2b

Chong, H.M.H. and De La Rue, R.M. (2004) Tuning of photonic crystal waveguide microcavity by thermooptic effect. IEEE Photonics Technology Letters, 16 (6), 1528-1530. (doi:10.1109/LPT.2004.826781).

Record type: Article

Abstract

A tunable photonic crystal microcavity with in-filling holes has been experimentally realized by using the thermooptic effect in silicon-on-insulator waveguide at /spl lambda/=1530 nm. The device was fabricated by reactive ion etching through the silicon core layer for high vertical confinement. A thin film heater has been integrated onto the microcavity. A small change in temperature (and consequent change in refractive index) was sufficient to cause an observable resonance shift. A resonance shift of 5 nm was achieved when the heater was switched on to a current of 1.2 mA (with switching power of about 9 mW).

Full text not available from this repository.

More information

Published date: June 2004
Keywords: 1.2 mA, 1530 nm, Si-SiO/sub 2/, high vertical confinement, in-filling holes, photonic crystal waveguide microcavity tuning, reactive ion etching, refractive index change, resonant shift, silicon core layer silicon-based photonic integrated circuits, silicon-on-insulator waveguide, thermooptic effect, thin film heater

Identifiers

Local EPrints ID: 48671
URI: https://eprints.soton.ac.uk/id/eprint/48671
ISSN: 1041-1135
PURE UUID: f1827ef9-83ab-40a7-a75a-9a27da35d67b
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 08 Oct 2007
Last modified: 14 Mar 2019 01:39

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×