A test structure for Young modulus extraction through capacitance-voltage measurements
A test structure for Young modulus extraction through capacitance-voltage measurements
We present a test structure for the on-line extraction of the Young's modulus of materials used for micro-electro-mechanical systems (MEMS) applications. This non-contact method is simple and non-destructive and allows for a fully electronic probing and readout. A single test structure is configured to respond to a change in voltage through a change in capacitance and the change in capacitance is then related to the Young's modulus and the device geometry. The device can also be used for simultaneous resonant frequency tests and measurement of pull-in voltage, thereby allowing for a multipoint orthogonal measurement. Experimental verification of the concept is presented in this paper. The test structure is fabricated in a silicon-on-insulator MEMS process allowing the extraction of the Young modulus of single-crystal silicon
901-903
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Seshia, Ashwin A.
4389f1ed-603a-4fed-9ceb-6279102b0fad
Steeneken, Peter
10f3735c-204b-4a7c-aa40-2a38f3e7ad2b
Van Beek, Joost
fa162d90-8568-4bbf-895d-03ef9d81013f
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Seshia, Ashwin A.
4389f1ed-603a-4fed-9ceb-6279102b0fad
Steeneken, Peter
10f3735c-204b-4a7c-aa40-2a38f3e7ad2b
Van Beek, Joost
fa162d90-8568-4bbf-895d-03ef9d81013f
Yan, Jize, Seshia, Ashwin A., Steeneken, Peter and Van Beek, Joost
(2006)
A test structure for Young modulus extraction through capacitance-voltage measurements.
In SENSORS, 2005 IEEE.
IEEE.
.
(doi:10.1109/ICSENS.2005.1597845).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We present a test structure for the on-line extraction of the Young's modulus of materials used for micro-electro-mechanical systems (MEMS) applications. This non-contact method is simple and non-destructive and allows for a fully electronic probing and readout. A single test structure is configured to respond to a change in voltage through a change in capacitance and the change in capacitance is then related to the Young's modulus and the device geometry. The device can also be used for simultaneous resonant frequency tests and measurement of pull-in voltage, thereby allowing for a multipoint orthogonal measurement. Experimental verification of the concept is presented in this paper. The test structure is fabricated in a silicon-on-insulator MEMS process allowing the extraction of the Young modulus of single-crystal silicon
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e-pub ahead of print date: 13 March 2006
Venue - Dates:
IEEE Sensors 2005, , Irvine, United States, 2005-10-30 - 2005-11-03
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Local EPrints ID: 486978
URI: http://eprints.soton.ac.uk/id/eprint/486978
PURE UUID: 56a99690-a5ce-450b-b574-7bd9c1bfeef0
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Date deposited: 09 Feb 2024 17:32
Last modified: 18 Mar 2024 03:33
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Author:
Ashwin A. Seshia
Author:
Peter Steeneken
Author:
Joost Van Beek
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