Conduction mechanism of Co-doped ZnO transparent memristive devices
Conduction mechanism of Co-doped ZnO transparent memristive devices
The Co dopant substitutes the Zn atomic position in the hexagonal crystal lattice and generates acceptor defects. These defects play significant role in modulating the conduction mechanism of the memristive device. The devices without Co dopant have high concentration of donor defects so that the electron can flow easily through hopping these donor defects; henceforth, only weak filaments can be formed during the set process. Meanwhile, the increase of the acceptor defects in the films enhances the film resistivity. This acceptor defects also contribute to an increase of barrier height at the electrode/dielectric interface where the electrons require higher energy to overcome this barrier and, eventually, induce the formation of strong filaments during the set process.
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
988c28d0-cf56-4e49-b3de-b57e01e7e94c
Prasad, Om Kumar
befc4dce-0f9a-4220-82bc-6b2b7d6d8a68
2021
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
988c28d0-cf56-4e49-b3de-b57e01e7e94c
Prasad, Om Kumar
befc4dce-0f9a-4220-82bc-6b2b7d6d8a68
Simanjuntak, Firman Mangasa, Chandrasekaran, Sridhar and Prasad, Om Kumar
,
et al.
(2021)
Conduction mechanism of Co-doped ZnO transparent memristive devices.
IOP Conference Series: Materials Science and Engineering, 1034, [012139].
(doi:10.1088/1757-899X/1034/1/012139).
Abstract
The Co dopant substitutes the Zn atomic position in the hexagonal crystal lattice and generates acceptor defects. These defects play significant role in modulating the conduction mechanism of the memristive device. The devices without Co dopant have high concentration of donor defects so that the electron can flow easily through hopping these donor defects; henceforth, only weak filaments can be formed during the set process. Meanwhile, the increase of the acceptor defects in the films enhances the film resistivity. This acceptor defects also contribute to an increase of barrier height at the electrode/dielectric interface where the electrons require higher energy to overcome this barrier and, eventually, induce the formation of strong filaments during the set process.
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Conduction mechanism of Co-doped ZnO transparent memristive devices
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Published date: 2021
Venue - Dates:
2nd International Conference on Mechanical Engineering Research and Application, Santika Hotel, Malang, Indonesia, 2020-10-07 - 2020-10-09
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Local EPrints ID: 487609
URI: http://eprints.soton.ac.uk/id/eprint/487609
ISSN: 1757-899X
PURE UUID: 54224537-b574-4a77-9081-96c2db52a6e7
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Date deposited: 29 Feb 2024 17:33
Last modified: 18 Mar 2024 03:54
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Author:
Firman Mangasa Simanjuntak
Author:
Sridhar Chandrasekaran
Author:
Om Kumar Prasad
Corporate Author: et al.
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