Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory
Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory
The switching characteristics of ITO/Zn1-xCoxO/ITO transparent resistive random access memories were studied. 5 mol% cobalt doped ZnO resistive layer improves bipolar switching properties. In addition, the redshift in band energy caused by doping of cobalt (Co) was studied. The doped memory device also showed a change in band energy by 0.1 eV when subjected to annealing of 400 °C. Annealing below 400 °C temperature did not show any characteristic changes. The film morphology analysis suggested the increase in roughness with annealing temperature, which can be seen from FESEM and AFM images. In this study annealing and Co doping effect on ZnO based non-volatile memory device is presented. Moreover, transparent memory devices with 90% transmittance at 550 nm wavelength have been reported. At low field and high field region Schottky emission and ionic conduction are dominated respectively.
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Pradhan, Alaka
4c74df07-0de6-4af9-bbb7-98d2f4bf32af
2021
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Pradhan, Alaka
4c74df07-0de6-4af9-bbb7-98d2f4bf32af
Panda, Debashis, Simanjuntak, Firman and Pradhan, Alaka
,
et al.
(2021)
Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory.
IOP Conference Series: Materials Science and Engineering, 1034, [012140].
(doi:10.1088/1757-899X/1034/1/012140).
Abstract
The switching characteristics of ITO/Zn1-xCoxO/ITO transparent resistive random access memories were studied. 5 mol% cobalt doped ZnO resistive layer improves bipolar switching properties. In addition, the redshift in band energy caused by doping of cobalt (Co) was studied. The doped memory device also showed a change in band energy by 0.1 eV when subjected to annealing of 400 °C. Annealing below 400 °C temperature did not show any characteristic changes. The film morphology analysis suggested the increase in roughness with annealing temperature, which can be seen from FESEM and AFM images. In this study annealing and Co doping effect on ZnO based non-volatile memory device is presented. Moreover, transparent memory devices with 90% transmittance at 550 nm wavelength have been reported. At low field and high field region Schottky emission and ionic conduction are dominated respectively.
Text
Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory
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Published date: 2021
Venue - Dates:
2nd International Conference on Mechanical Engineering Research and Application, Santika Hotel, Malang, Indonesia, 2020-10-07 - 2020-10-09
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Local EPrints ID: 487610
URI: http://eprints.soton.ac.uk/id/eprint/487610
ISSN: 1757-899X
PURE UUID: 7a957153-a741-46f5-9de6-064b7d3b4381
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Date deposited: 29 Feb 2024 17:34
Last modified: 18 Mar 2024 03:54
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Author:
Debashis Panda
Author:
Firman Simanjuntak
Author:
Alaka Pradhan
Corporate Author: et al.
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