ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices
ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices
The impact of ZrOx material serving as an electro-thermal modulation layer (ETML) in the TiN/Ti/TiOx/TiN memristive device structure is investigated. Although the introduction of the ETML increases the total thickness of the device resulting in the increase of forming voltage, it helps to generate weak filaments. The formation of weak filaments in analog memristive devices is preferable to ensure stable switching cycles and epoch training. The device made with ETML performs stable endurance for more than 600 cycles with an On/Off ratio of approximately one order of magnitude; moreover, the device exhibits uniform potentiation and depression with low nonlinearity.
Chang, Lung-Yu
f319b36a-88d3-4da0-94da-205c5f52c19b
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Gaspari, Femiana
c3efb096-397f-495c-8d10-0f5918f01bb2
2021
Chang, Lung-Yu
f319b36a-88d3-4da0-94da-205c5f52c19b
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Gaspari, Femiana
c3efb096-397f-495c-8d10-0f5918f01bb2
Chang, Lung-Yu, Simanjuntak, Firman Mangasa and Gaspari, Femiana
,
et al.
(2021)
ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices.
IOP Conference Series: Materials Science and Engineering, 1034, [012142].
(doi:10.1088/1757-899X/1034/1/012142).
Abstract
The impact of ZrOx material serving as an electro-thermal modulation layer (ETML) in the TiN/Ti/TiOx/TiN memristive device structure is investigated. Although the introduction of the ETML increases the total thickness of the device resulting in the increase of forming voltage, it helps to generate weak filaments. The formation of weak filaments in analog memristive devices is preferable to ensure stable switching cycles and epoch training. The device made with ETML performs stable endurance for more than 600 cycles with an On/Off ratio of approximately one order of magnitude; moreover, the device exhibits uniform potentiation and depression with low nonlinearity.
Text
ZrOx insertion layer enhanced switching and synaptic performances of TiO X -based memristive devices
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Published date: 2021
Venue - Dates:
2nd International Conference on Mechanical Engineering Research and Application, Santika Hotel, Malang, Indonesia, 2020-10-07 - 2020-10-09
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Local EPrints ID: 487611
URI: http://eprints.soton.ac.uk/id/eprint/487611
ISSN: 1757-899X
PURE UUID: b4430499-8b2f-4d77-b98c-b9086c1a161d
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Date deposited: 29 Feb 2024 17:35
Last modified: 18 Mar 2024 03:54
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Author:
Lung-Yu Chang
Author:
Firman Mangasa Simanjuntak
Author:
Femiana Gaspari
Corporate Author: et al.
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