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Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band

Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band
Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band
Silicon planar waveguides are designed to maximize the wavelength conversion efficiency via the use of Raman-enhanced four-wave mixing in the telecom band. By investigating the dispersion properties of various rib waveguide structures, the optimum etch depth and width are selected to obtain efficient phase-matching for a continuous-wave pump at 1545 nm. The design benefits from good fabrication tolerance in the structural parameters, which are well within the precision of standard lithography and etching processes. Using the optimized waveguides, simulations show that it is possible to reach conversion efficiencies as high as ∼ 45 dB for waveguide lengths as short as 4.6 cm, with a pump power of only 130 mW. This enhancement in the conversion efficiency is about 50 dB higher than conventional values for FWM in integrated silicon photonic systems, highlighting the benefits of exploiting the coupling between the two nonlinear processes.
1094-4087
8715-8722
Sun, Shiyu
2fbabb2a-926a-48ac-a136-ec9fc90e2a67
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Peacock, Anna C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Sun, Shiyu
2fbabb2a-926a-48ac-a136-ec9fc90e2a67
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Peacock, Anna C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc

Sun, Shiyu, Mashanovich, Goran Z. and Peacock, Anna C. (2024) Design of integrated silicon waveguides for Raman-enhanced four-wave mixing in the telecom band. Optics Express, 32 (6), 8715-8722. (doi:10.1364/OE.509992).

Record type: Article

Abstract

Silicon planar waveguides are designed to maximize the wavelength conversion efficiency via the use of Raman-enhanced four-wave mixing in the telecom band. By investigating the dispersion properties of various rib waveguide structures, the optimum etch depth and width are selected to obtain efficient phase-matching for a continuous-wave pump at 1545 nm. The design benefits from good fabrication tolerance in the structural parameters, which are well within the precision of standard lithography and etching processes. Using the optimized waveguides, simulations show that it is possible to reach conversion efficiencies as high as ∼ 45 dB for waveguide lengths as short as 4.6 cm, with a pump power of only 130 mW. This enhancement in the conversion efficiency is about 50 dB higher than conventional values for FWM in integrated silicon photonic systems, highlighting the benefits of exploiting the coupling between the two nonlinear processes.

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Accepted/In Press date: 15 February 2024
Published date: 27 February 2024

Identifiers

Local EPrints ID: 488971
URI: http://eprints.soton.ac.uk/id/eprint/488971
ISSN: 1094-4087
PURE UUID: 527e3f03-3fb2-40df-8964-de88ad847068
ORCID for Shiyu Sun: ORCID iD orcid.org/0000-0002-8308-2077
ORCID for Goran Z. Mashanovich: ORCID iD orcid.org/0000-0003-2954-5138
ORCID for Anna C. Peacock: ORCID iD orcid.org/0000-0002-1940-7172

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Date deposited: 10 Apr 2024 16:34
Last modified: 29 Oct 2024 02:45

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Contributors

Author: Shiyu Sun ORCID iD
Author: Goran Z. Mashanovich ORCID iD
Author: Anna C. Peacock ORCID iD

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