Richardson, Stephen C., Woods, Jonathan R.C., Daykin, Jake, Gorecki, Jon, Bek, Roman, Klokkou, Nicholas T., Wilkinson, James s., Jetter, Michael and Apostolopoulos, Vasileios , Costa, M.F., Flores-Arias, M., Pauliat, G. and Segonds, P. (eds.) (2022) III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm. EPJ Web of Conferences, 266. (doi:10.1051/epjconf/202226601011).
Abstract
We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.
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