Solidification microstructure and tensile deformation mechanisms of selective electron beam melted Ni3Al-based alloy at room and elevated temperatures
Solidification microstructure and tensile deformation mechanisms of selective electron beam melted Ni3Al-based alloy at room and elevated temperatures
Selective electron beam melting (SEBM) was used to process crack-free Ni3Al-based IC21 alloy (low density superalloy) containing ~85% γ′-volume fraction. There are distinct differences between dendrites and inter-dendritic regions with the presence of coarse γ+γ′ eutectic and secondary solidification microconstituents (Cr and Mo-rich) in the latter. The pronounced inter-dendritic eutectic regions suggest that a significant elemental partitioning between the liquid and solid occurred during the SEBM. The terminal liquid is trapped at boundaries between dendrites and grains, as evidenced by the liquid films on cracked surfaces. In contrast to extensive studies indicating the segregation of Zr and B, we show unambiguously the segregation of Si to low melting point liquid films and thereby enhancing the susceptibility to solidification cracking in IC21 produced by SEBM. The tensile specimens extracted from the crack-free IC21 samples exhibit superior properties at room temperature (RT) and 1000 °C. The RT deformation mechanism is characterised by cutting γ′-phase with two paired dislocations and antiphase boundaries in between. At 1000 °C tensile deformation, the well-developed γ/γ′ interfacial dislocation networks are in good agreement with their promising high-temperature performance (σy = 518 ± 10 MPa, σUTS = 560 ± 16 MPa, 20.5% for ductility).
Yao, Y.
be300299-f288-4a9e-94f7-ed89331379fd
Xing, C.
8ec33f7f-c0a0-44b0-aaf7-0862ca31cfc1
Peng, H.
ea0a53c5-1432-42d8-a39a-e31b994d70c7
Guo, H.
12df7e81-c2c4-408e-b8ec-fc3b26af4761
Chen, B.
be54a9a8-da2a-4e6f-ae0e-0b076be87daf
7 December 2020
Yao, Y.
be300299-f288-4a9e-94f7-ed89331379fd
Xing, C.
8ec33f7f-c0a0-44b0-aaf7-0862ca31cfc1
Peng, H.
ea0a53c5-1432-42d8-a39a-e31b994d70c7
Guo, H.
12df7e81-c2c4-408e-b8ec-fc3b26af4761
Chen, B.
be54a9a8-da2a-4e6f-ae0e-0b076be87daf
Yao, Y., Xing, C., Peng, H., Guo, H. and Chen, B.
(2020)
Solidification microstructure and tensile deformation mechanisms of selective electron beam melted Ni3Al-based alloy at room and elevated temperatures.
Materials Science and Engineering: A, 802, [140629].
(doi:10.1016/j.msea.2020.140629).
Abstract
Selective electron beam melting (SEBM) was used to process crack-free Ni3Al-based IC21 alloy (low density superalloy) containing ~85% γ′-volume fraction. There are distinct differences between dendrites and inter-dendritic regions with the presence of coarse γ+γ′ eutectic and secondary solidification microconstituents (Cr and Mo-rich) in the latter. The pronounced inter-dendritic eutectic regions suggest that a significant elemental partitioning between the liquid and solid occurred during the SEBM. The terminal liquid is trapped at boundaries between dendrites and grains, as evidenced by the liquid films on cracked surfaces. In contrast to extensive studies indicating the segregation of Zr and B, we show unambiguously the segregation of Si to low melting point liquid films and thereby enhancing the susceptibility to solidification cracking in IC21 produced by SEBM. The tensile specimens extracted from the crack-free IC21 samples exhibit superior properties at room temperature (RT) and 1000 °C. The RT deformation mechanism is characterised by cutting γ′-phase with two paired dislocations and antiphase boundaries in between. At 1000 °C tensile deformation, the well-developed γ/γ′ interfacial dislocation networks are in good agreement with their promising high-temperature performance (σy = 518 ± 10 MPa, σUTS = 560 ± 16 MPa, 20.5% for ductility).
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Accepted/In Press date: 1 December 2020
e-pub ahead of print date: 4 December 2020
Published date: 7 December 2020
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Local EPrints ID: 489858
URI: http://eprints.soton.ac.uk/id/eprint/489858
ISSN: 0921-5093
PURE UUID: fd28045d-4dc9-47fa-85ff-a1da52e7cf63
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Date deposited: 03 May 2024 16:46
Last modified: 09 May 2024 02:06
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Author:
Y. Yao
Author:
C. Xing
Author:
H. Peng
Author:
H. Guo
Author:
B. Chen
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