Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

Harke, Sayali Shrishail, Zhang, Tongjun, Huang, Ruomeng and Gurnani, Chitra (2023) Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices. Materials Advances, 4 (18), 4119-4128. (doi:10.1039/D3MA00205E).

Record type: Article

Abstract

A one-step, simple, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] as a single source precursor without a binding agent. XRD, Raman, SAED, and HRTEM results revealed the crystalline orthorhombic stibnite phase. The sheaf-like Sb2S3 exhibited a band gap energy of 1.72 eV. The Sb2S3 film is uniform and well-adhered and is further developed as a novel resistive random-access memory material. The Ag/Sb2S3/FTO memristive device demonstrated low operating voltage and the performance of the device over multiple cycles revealed dependable bipolar resistive switching behaviour and an ON/OFF ratio of ca. 10.

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Harke,2023 - Version of Record

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