Advanced metrology of thick silicon nitride films at 300 mm scale for next generation high-Q photonic devices
Advanced metrology of thick silicon nitride films at 300 mm scale for next generation high-Q photonic devices
The proposed paper will present various inline and offline advanced metrology data of thick SiN films (~>500 nm) prepared by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques. Our study combines high-volume inline and high-accuracy offline metrology to best characterize our thick SiN films. We present a refractive index (n) comparison for annealed and unannealed PECVD/LPCVD wafers.
LPCVD, PECVD, VASE, advanced metrology, annealed, refractive index, thick SiN
Kar, Soumen
ba86e843-2641-46d8-be0a-836be81a599a
Gangi, Nicholas W.
4eb3573a-17c6-498c-8ca5-fffb99263d11
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Carpenter, Lewis G.
5877a1f3-c300-41a8-9c8c-4d5b53f54b3e
Fahrenkopf, Nicholas M.
7312ef2f-4640-4a79-b189-02822b9c48aa
Baiocco, Christopher V.
4e82483d-2361-4f9a-8cec-f9da927c62aa
2024
Kar, Soumen
ba86e843-2641-46d8-be0a-836be81a599a
Gangi, Nicholas W.
4eb3573a-17c6-498c-8ca5-fffb99263d11
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Carpenter, Lewis G.
5877a1f3-c300-41a8-9c8c-4d5b53f54b3e
Fahrenkopf, Nicholas M.
7312ef2f-4640-4a79-b189-02822b9c48aa
Baiocco, Christopher V.
4e82483d-2361-4f9a-8cec-f9da927c62aa
Kar, Soumen, Gangi, Nicholas W., Morgan, Katrina A., Carpenter, Lewis G., Fahrenkopf, Nicholas M. and Baiocco, Christopher V.
(2024)
Advanced metrology of thick silicon nitride films at 300 mm scale for next generation high-Q photonic devices.
In 2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
IEEE.
6 pp
.
(doi:10.1109/ASMC61125.2024.10545523).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The proposed paper will present various inline and offline advanced metrology data of thick SiN films (~>500 nm) prepared by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques. Our study combines high-volume inline and high-accuracy offline metrology to best characterize our thick SiN films. We present a refractive index (n) comparison for annealed and unannealed PECVD/LPCVD wafers.
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e-pub ahead of print date: 6 June 2024
Published date: 2024
Additional Information:
Publisher Copyright:
© 2024 IEEE.
Venue - Dates:
IEEE/SEMI 2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference, , Albany, United States, 2024-05-13 - 2024-05-16
Keywords:
LPCVD, PECVD, VASE, advanced metrology, annealed, refractive index, thick SiN
Identifiers
Local EPrints ID: 491416
URI: http://eprints.soton.ac.uk/id/eprint/491416
ISSN: 1078-8743
PURE UUID: 0ce237d6-a2b3-4ab9-8988-6e05b0e1f2cf
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Date deposited: 21 Jun 2024 17:08
Last modified: 11 Jul 2024 01:48
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Contributors
Author:
Soumen Kar
Author:
Nicholas W. Gangi
Author:
Katrina A. Morgan
Author:
Lewis G. Carpenter
Author:
Nicholas M. Fahrenkopf
Author:
Christopher V. Baiocco
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