Synthesis of binder-free and highly conducting MoS2 sphere like electrode material for supercapacitor application
Synthesis of binder-free and highly conducting MoS2 sphere like electrode material for supercapacitor application
Binder free spheres like molybdenum disulfide (MoS2) electrode material (E-M) is synthesized on nickel foam by chemical vapor deposition technique. The interconnected spheres like structures are responsible for maximum electrolyte-ions diffusion and control volume-expansion of MoS2 E-M. The synthesized sphere-based MoS2 E-M is exhibited specific capacitance of 4200 F/g, energy density and power density of 53–145 Wh/kg and 250–3000 W/kg. The absence of charge transfer resistance and binder free synthesis persuaded the MoS2 E-M to reveal the excellent cyclic stability of 98.76 % even after 4000 cycles. The equivalent series resistance before/after 4000 cycles of MoS2 E-M are −3.54/3.22 Ω. The constant b values are 0.721, 0.759, 0.768 and 0.771 which are greater than 0.5 but less than 1 indicating the hybrid-nature of the synthesied E-M. The diffusive and capacitive contributions are 96,78 and 4, 12 % at 5 and 200 mV/s.. The hybrid-nature of the MoS2 E-M makes it usable for the next-generation electrochemical energy storage devices.
Binder-free, Chemical vapor deposition, Electrode material, MoS, Nanostructure, Sphere
Raza, A.
4f426feb-8e38-4788-b938-e9fc9e24fac5
Farid, A.
32fadb94-ed24-4934-8136-cfe36ba3d221
Rasheed, A
57a1f805-2cb2-45df-99b3-84ebf7ddb73d
Yousaf, Misbah
d2950503-0dab-4b32-82dd-9eb5add44af2
Ayub, N.
5db8abb0-ea4d-411e-85c1-1313d6741610
Khan, I.A.
2e2e7da1-778d-4e77-b398-a125f025318e
Ghanem, Mohamed A.
093b8d56-bc0f-4c01-993c-d5e3a67537cb
Mohammed, Khaled
1c3c5641-4d0a-4c4d-bb26-fe733b8dbf63
3 May 2024
Raza, A.
4f426feb-8e38-4788-b938-e9fc9e24fac5
Farid, A.
32fadb94-ed24-4934-8136-cfe36ba3d221
Rasheed, A
57a1f805-2cb2-45df-99b3-84ebf7ddb73d
Yousaf, Misbah
d2950503-0dab-4b32-82dd-9eb5add44af2
Ayub, N.
5db8abb0-ea4d-411e-85c1-1313d6741610
Khan, I.A.
2e2e7da1-778d-4e77-b398-a125f025318e
Ghanem, Mohamed A.
093b8d56-bc0f-4c01-993c-d5e3a67537cb
Mohammed, Khaled
1c3c5641-4d0a-4c4d-bb26-fe733b8dbf63
Raza, A., Farid, A., Rasheed, A, Yousaf, Misbah, Ayub, N., Khan, I.A., Ghanem, Mohamed A. and Mohammed, Khaled
(2024)
Synthesis of binder-free and highly conducting MoS2 sphere like electrode material for supercapacitor application.
Physica B: Condensed Matter, 685, [415982].
(doi:10.1016/j.physb.2024.415982).
Abstract
Binder free spheres like molybdenum disulfide (MoS2) electrode material (E-M) is synthesized on nickel foam by chemical vapor deposition technique. The interconnected spheres like structures are responsible for maximum electrolyte-ions diffusion and control volume-expansion of MoS2 E-M. The synthesized sphere-based MoS2 E-M is exhibited specific capacitance of 4200 F/g, energy density and power density of 53–145 Wh/kg and 250–3000 W/kg. The absence of charge transfer resistance and binder free synthesis persuaded the MoS2 E-M to reveal the excellent cyclic stability of 98.76 % even after 4000 cycles. The equivalent series resistance before/after 4000 cycles of MoS2 E-M are −3.54/3.22 Ω. The constant b values are 0.721, 0.759, 0.768 and 0.771 which are greater than 0.5 but less than 1 indicating the hybrid-nature of the synthesied E-M. The diffusive and capacitive contributions are 96,78 and 4, 12 % at 5 and 200 mV/s.. The hybrid-nature of the MoS2 E-M makes it usable for the next-generation electrochemical energy storage devices.
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Accepted/In Press date: 15 April 2024
e-pub ahead of print date: 17 April 2024
Published date: 3 May 2024
Keywords:
Binder-free, Chemical vapor deposition, Electrode material, MoS, Nanostructure, Sphere
Identifiers
Local EPrints ID: 491586
URI: http://eprints.soton.ac.uk/id/eprint/491586
ISSN: 0921-4526
PURE UUID: 61b5b284-0e05-459e-8b76-0eae0e3a7c89
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Date deposited: 27 Jun 2024 16:39
Last modified: 28 Jun 2024 01:58
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Contributors
Author:
A. Raza
Author:
A. Farid
Author:
A Rasheed
Author:
Misbah Yousaf
Author:
N. Ayub
Author:
I.A. Khan
Author:
Mohamed A. Ghanem
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