Mid-infrared silicon photonics: from benchtop to real-world applications

Abstract

Silicon photonics is one of the most dynamic fields within photonics, and it has seen huge progress in the last 20 years, addressing applications in data centers, autonomous cars, and sensing. It is mostly focused on the telecommunications wavelength range (1.3 and 1.55 µm), where silicon becomes transparent. In this range, there are excellent light sources and photodetectors, as well as optical fibers operating with extremely low losses and dispersion. It is a technology that hugely benefits from the availability of complementary metal–oxide–semiconductor (CMOS) fabrication infrastructure and techniques used for microelectronics. Silicon and germanium, as another CMOS compatible group IV material, are transparent beyond the wavelength of 2 µm. The mid-IR wavelength range (2–20 µm) is of particular importance as it contains strong absorption signatures of many molecules. Therefore, Si- and Ge-based platforms open up the possibility of small and cost-effective sensing in the fingerprint region for medical and environmental monitoring. In this paper, we discuss the current mid-IR silicon photonics landscape, future directions, and potential applications of the field.

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Identifiers

ORCID for Colin Mitchell: orcid.org/0000-0001-9773-8842

ORCID for Shiyu Sun: orcid.org/0000-0002-8308-2077

ORCID for Milos Nedeljkovic: orcid.org/0000-0002-9170-7911

ORCID for Anna Peacock: orcid.org/0000-0002-1940-7172

ORCID for Горан Машановић: orcid.org/0000-0003-2954-5138

ORCID for Dave Rowe: orcid.org/0000-0002-1167-150X

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