High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates
High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates
The integration of lead zirconate titanate (Pb(ZrxTi1-x)O3) (PZT) compounds on Si substrates with a smooth surface would provide a key technology for silicon photonic devices. The quality of the deposited thin film is critical in order to integrate Pb(ZrxTi1-x)O3 on Si substrates for applications such as pyroelectric mid-infrared detectors or optical modulators. Here, we have applied physical vapour deposition technique using a modified molecular beam epitaxy tool to deposit perovskite Pb(ZrxTi1-x)O3 on Si and Pt substrates. We have developed a method to grow crack-free PZT films on Si substrates. The fabrication procedure entailed the use of TiO2 as a buffer layer and post annealing of the PZT/TiO2/Si films under oxygen atmosphere. Cross section Scanning Electron Microscopy images enabled the identification of two distinct layers: PZT and TiO2, which was also confirmed by Spectroscopic Ellipsometry. X-Ray Diffraction patterns indicated the transition from the rhombohedral to the tetragonal phase and the formation of the perovskite phase of Pb(Zr0.44Ti0.56)O3.
Combinatorial screening, High throughput synthesis, Lead zirconate titanate, Perovskites, Physical vapour deposition, Silicon photonics, Thin films
Bakaimi, Ioanna
3c4e7000-517c-41fa-84db-c45641125e4d
Hayden, Brian E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Mitchell, Colin J.
0e48c936-a405-434d-818a-d83e382aa826
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
29 February 2024
Bakaimi, Ioanna
3c4e7000-517c-41fa-84db-c45641125e4d
Hayden, Brian E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Mitchell, Colin J.
0e48c936-a405-434d-818a-d83e382aa826
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Bakaimi, Ioanna, Hayden, Brian E., Mitchell, Colin J. and Mashanovich, Goran Z.
(2024)
High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates.
Thin Solid Films, 791, [140239].
(doi:10.1016/j.tsf.2024.140239).
Abstract
The integration of lead zirconate titanate (Pb(ZrxTi1-x)O3) (PZT) compounds on Si substrates with a smooth surface would provide a key technology for silicon photonic devices. The quality of the deposited thin film is critical in order to integrate Pb(ZrxTi1-x)O3 on Si substrates for applications such as pyroelectric mid-infrared detectors or optical modulators. Here, we have applied physical vapour deposition technique using a modified molecular beam epitaxy tool to deposit perovskite Pb(ZrxTi1-x)O3 on Si and Pt substrates. We have developed a method to grow crack-free PZT films on Si substrates. The fabrication procedure entailed the use of TiO2 as a buffer layer and post annealing of the PZT/TiO2/Si films under oxygen atmosphere. Cross section Scanning Electron Microscopy images enabled the identification of two distinct layers: PZT and TiO2, which was also confirmed by Spectroscopic Ellipsometry. X-Ray Diffraction patterns indicated the transition from the rhombohedral to the tetragonal phase and the formation of the perovskite phase of Pb(Zr0.44Ti0.56)O3.
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Accepted/In Press date: 25 January 2024
e-pub ahead of print date: 26 January 2024
Published date: 29 February 2024
Keywords:
Combinatorial screening, High throughput synthesis, Lead zirconate titanate, Perovskites, Physical vapour deposition, Silicon photonics, Thin films
Identifiers
Local EPrints ID: 493570
URI: http://eprints.soton.ac.uk/id/eprint/493570
ISSN: 0040-6090
PURE UUID: a2c48bce-d6a6-4d6f-9193-0c28c1b5f286
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Date deposited: 06 Sep 2024 16:42
Last modified: 29 Oct 2024 02:45
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Author:
Colin J. Mitchell
Author:
Goran Z. Mashanovich
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