Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures
Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures
Growth of electroluminescent devices based on strain-compensated In xGa1-xAs/ InyAl1-yAs has been undertaken. The very high conduction band offset of the strained material allows the design of such devices with very short emission wavelength. Device design and material characterisation for 2 μm emission has been undertaken. An analysis of the direct current amplitude modulation response of the strained structure is also performed. Strong room temperature emission with peaks around 1.55 μm dependent upon driving current has been observed under continuous wave reverse operational bias. This reverse bias emission was observed owing to the presence of interface states. Moreover experimentally measured current-voltage characteristics in forward bias are found to be in good agreement with theoretical predictions.
497-501
Banerjee, S.
697c77ef-53c1-4370-8c21-cb7065815627
Shore, K. A.
f3bf58f3-2c1e-469c-ab2f-29ce0b5a9e86
Mitchell, C. J.
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Sly, J. L.
d167f5bc-648f-46bc-b840-f391d2e9a7fb
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
1 October 2005
Banerjee, S.
697c77ef-53c1-4370-8c21-cb7065815627
Shore, K. A.
f3bf58f3-2c1e-469c-ab2f-29ce0b5a9e86
Mitchell, C. J.
0e48c936-a405-434d-818a-d83e382aa826
Sly, J. L.
d167f5bc-648f-46bc-b840-f391d2e9a7fb
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Banerjee, S., Shore, K. A., Mitchell, C. J., Sly, J. L. and Missous, M.
(2005)
Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures.
IEE Proceedings: Circuits, Devices and Systems, 152 (5), .
(doi:10.1049/ip-cds:20045042).
Abstract
Growth of electroluminescent devices based on strain-compensated In xGa1-xAs/ InyAl1-yAs has been undertaken. The very high conduction band offset of the strained material allows the design of such devices with very short emission wavelength. Device design and material characterisation for 2 μm emission has been undertaken. An analysis of the direct current amplitude modulation response of the strained structure is also performed. Strong room temperature emission with peaks around 1.55 μm dependent upon driving current has been observed under continuous wave reverse operational bias. This reverse bias emission was observed owing to the presence of interface states. Moreover experimentally measured current-voltage characteristics in forward bias are found to be in good agreement with theoretical predictions.
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Published date: 1 October 2005
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Local EPrints ID: 493965
URI: http://eprints.soton.ac.uk/id/eprint/493965
ISSN: 1350-2409
PURE UUID: 9c405de0-1e99-440b-831d-c9e8f1e0047d
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Date deposited: 17 Sep 2024 17:17
Last modified: 18 Sep 2024 01:46
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Author:
S. Banerjee
Author:
K. A. Shore
Author:
C. J. Mitchell
Author:
J. L. Sly
Author:
M. Missous
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