Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s Quantum Cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm)

Mitchell, C. J., Sly, J. L., Missous, M., Banerjee, S. and Shore, K. A. (2002) Material characterization of highly strained and partially strain compensated In_xGa_1-xAs/In_yAl_1-yA_s Quantum Cascade light emitting diodes grown by MBE for emission in the near infrared (2-4 μm). In 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002. vol. 2002-January, IEEE. pp. 8-13 . (doi:10.1109/EDMO.2002.1174922).

Abstract

Material characterization of quantum cascade (QC) structures aimed at producing emission in the near to mid infrared wavelengths (2-4 μm) is presented. It is proposed that this material system (grown by MBE under stoichiometric growth conditions) can be developed to produce a quantum cascade laser (QCL) operating at communication wavelengths below 2 μm. The In_xGa_1-xAs/In_yAl_1-yAs on a semi-insulating InP substrate material system demonstrates compressive strain in the quantum well (QW) material up to 1.85% (x=0.8) and partially compensating tensile strain in the barrier material of up to 1.86% (y=0.25) both with respect to InP. Presented is a comparison of lattice matched and highly strained devices. Experimental data is provided to demonstrate the excellent optical and electrical characteristics of the material (photoluminescence signals at room temperature and I-V measurements down to 20 K). The results are encouraging for the development of this material system to produce the first QC emission approaching 2 μm using current InGaAs/InAlAs on InP MBE tooling technology.

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Contributors

Author: C. J. Mitchell

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