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Highly strained InxGa(1-x)As-InyAl (1-y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained InxGa(1-x)As-InyAl (1-y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE
Highly strained InxGa(1-x)As-InyAl (1-y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa (1-x)As-InyAl(1-y)As(x > 0.8,y < 0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of ∼420°C to produce structures that are suitable for both emission and detection in the 2-5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga 0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ-Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2-7 μm) in three structures of differing In 0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs-InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ-Γ bands and the Γ-X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.

Quantum cascade lasers (QCL), Quantum well infrared photodetectors (QWIP), Strained epitaxy
496-502
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Mitchell, C.
0e48c936-a405-434d-818a-d83e382aa826
Sly, J.
d167f5bc-648f-46bc-b840-f391d2e9a7fb
Lai, K. T.
7c246eea-09e6-4567-921d-903b046b0c86
Gupta, R.
619ee4fe-3929-46b6-911e-d42188b490f5
Haywood, S. K.
706cc04b-edf5-4629-8588-9cffc03a1ffa
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Mitchell, C.
0e48c936-a405-434d-818a-d83e382aa826
Sly, J.
d167f5bc-648f-46bc-b840-f391d2e9a7fb
Lai, K. T.
7c246eea-09e6-4567-921d-903b046b0c86
Gupta, R.
619ee4fe-3929-46b6-911e-d42188b490f5
Haywood, S. K.
706cc04b-edf5-4629-8588-9cffc03a1ffa

Missous, M., Mitchell, C., Sly, J., Lai, K. T., Gupta, R. and Haywood, S. K. (2003) Highly strained InxGa(1-x)As-InyAl (1-y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE. Proceedings of the 11th International Conference on Narrow Gap, , Buffalo, NY., United States. 16 - 20 Jun 2003. pp. 496-502 . (doi:10.1016/j.physe.2003.08.066).

Record type: Conference or Workshop Item (Paper)

Abstract

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa (1-x)As-InyAl(1-y)As(x > 0.8,y < 0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of ∼420°C to produce structures that are suitable for both emission and detection in the 2-5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga 0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ-Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2-7 μm) in three structures of differing In 0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs-InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ-Γ bands and the Γ-X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.

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More information

e-pub ahead of print date: 29 November 2003
Venue - Dates: Proceedings of the 11th International Conference on Narrow Gap, , Buffalo, NY., United States, 2003-06-16 - 2003-06-20
Keywords: Quantum cascade lasers (QCL), Quantum well infrared photodetectors (QWIP), Strained epitaxy

Identifiers

Local EPrints ID: 493968
URI: http://eprints.soton.ac.uk/id/eprint/493968
PURE UUID: 1adc4f0c-5972-4d34-9e5c-726bd3a293ff
ORCID for C. Mitchell: ORCID iD orcid.org/0000-0001-9773-8842

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Date deposited: 17 Sep 2024 17:17
Last modified: 18 Sep 2024 01:46

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Contributors

Author: M. Missous
Author: C. Mitchell ORCID iD
Author: J. Sly
Author: K. T. Lai
Author: R. Gupta
Author: S. K. Haywood

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