Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices
Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices
Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGal xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.
719-720
Banerjee, S.
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Shore, K. A.
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Mitchell, C. J.
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Sly, J. L.
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Missous, M.
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1 January 2004
Banerjee, S.
697c77ef-53c1-4370-8c21-cb7065815627
Shore, K. A.
f3bf58f3-2c1e-469c-ab2f-29ce0b5a9e86
Mitchell, C. J.
0e48c936-a405-434d-818a-d83e382aa826
Sly, J. L.
d167f5bc-648f-46bc-b840-f391d2e9a7fb
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Banerjee, S., Shore, K. A., Mitchell, C. J., Sly, J. L. and Missous, M.
(2004)
Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices.
Conference on Lasers and Electro-Optics, CLEO, , Washington, DC, United States.
17 - 19 May 2004.
.
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Conference or Workshop Item
(Paper)
Abstract
Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGal xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.
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Published date: 1 January 2004
Venue - Dates:
Conference on Lasers and Electro-Optics, CLEO, , Washington, DC, United States, 2004-05-17 - 2004-05-19
Identifiers
Local EPrints ID: 493969
URI: http://eprints.soton.ac.uk/id/eprint/493969
PURE UUID: 4f7b32f4-67b4-4d34-8be0-27c8ae4456e0
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Date deposited: 17 Sep 2024 17:17
Last modified: 18 Sep 2024 01:46
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Contributors
Author:
S. Banerjee
Author:
K. A. Shore
Author:
C. J. Mitchell
Author:
J. L. Sly
Author:
M. Missous
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