Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier
Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier
An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work. The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre wave for use as a high power (multi mW) Terahertz source in conjunction with a mm-wave multiplier, with novel Schottky diodes. The epitaxial growth of both the Gunn diode and Schottky diode wafers were performed using an industrial scale Molecular Beam Epitaxy (V100+) reactor. The Gunn diodes were then manufactured and packaged by e2v Technologies (UK) Plc. Physical models of the high power Gunn diode sources, presented here, are developed in SILVACO.
Gunn diode, Mm-wave multiplier, Physical modeling, Schottky varactor, Security imaging, Sub-millimetre imaging
Amir, F.
d0df8cda-a304-405c-9ae8-1dba336ed424
Mitchell, C.
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Farrington, N.
ba8e905c-862b-4609-b0cc-9e27218de542
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
17 September 2009
Amir, F.
d0df8cda-a304-405c-9ae8-1dba336ed424
Mitchell, C.
0e48c936-a405-434d-818a-d83e382aa826
Farrington, N.
ba8e905c-862b-4609-b0cc-9e27218de542
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Amir, F., Mitchell, C., Farrington, N. and Missous, M.
(2009)
Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier.
In Millimetre Wave and Terahertz Sensors and Technology II.
vol. 7485
(doi:10.1117/12.830296).
Record type:
Conference or Workshop Item
(Paper)
Abstract
An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work. The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre wave for use as a high power (multi mW) Terahertz source in conjunction with a mm-wave multiplier, with novel Schottky diodes. The epitaxial growth of both the Gunn diode and Schottky diode wafers were performed using an industrial scale Molecular Beam Epitaxy (V100+) reactor. The Gunn diodes were then manufactured and packaged by e2v Technologies (UK) Plc. Physical models of the high power Gunn diode sources, presented here, are developed in SILVACO.
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More information
Published date: 17 September 2009
Venue - Dates:
Millimetre Wave and Terahertz Sensors and Technology II, , Berlin, Germany, 2009-09-01 - 2009-09-03
Keywords:
Gunn diode, Mm-wave multiplier, Physical modeling, Schottky varactor, Security imaging, Sub-millimetre imaging
Identifiers
Local EPrints ID: 493970
URI: http://eprints.soton.ac.uk/id/eprint/493970
ISSN: 0277-786X
PURE UUID: 122096b0-b004-425d-908e-fd591687c6a4
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Date deposited: 17 Sep 2024 17:17
Last modified: 18 Sep 2024 01:46
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Contributors
Author:
F. Amir
Author:
C. Mitchell
Author:
M. Missous
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